Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel

The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimension...

Full description

Bibliographic Details
Main Authors:	Xinghuan Chen, Fangzhou Wang, Zeheng Wang, Jing-Kai Huang
Format:	Article
Language:	English
Published:	MDPI AG 2023-10-01
Series:	Micromachines
Subjects:	GaN HEMT figure of merit coherent channel
Online Access:	https://www.mdpi.com/2072-666X/14/11/2041

Similar Items

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application
by: Ping-Hsun Lee, et al.
Published: (2023-01-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
by: Lili Han, et al.
Published: (2023-06-01)

Diamond/GaN HEMTs: Where from and Where to?
by: Joana C. Mendes, et al.
Published: (2022-01-01)

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications
by: Chenbi Li, et al.
Published: (2024-02-01)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
by: Hanghang Lv, et al.
Published: (2023-07-01)

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
by: Po-Chien Chou, et al.
Published: (2017-02-01)

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs
by: Hongyue Wang, et al.
Published: (2022-01-01)

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs
by: Alessandro Borghese, et al.
Published: (2021-12-01)

Research Progress in Capping Diamond Growth on GaN HEMT: A Review
by: Yingnan Wang, et al.
Published: (2023-03-01)

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
by: Gwen Rolland, et al.
Published: (2021-09-01)

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
by: Yongle Qi, et al.
Published: (2020-12-01)

Computational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTs
by: Ankit Soni, et al.
Published: (2020-01-01)

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model
by: Renyi Li, et al.
Published: (2024-03-01)

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs
by: Qizheng Ji, et al.
Published: (2023-03-01)

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
by: Howie Tseng, et al.
Published: (2024-01-01)

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
by: Chih-Chiang Wu, et al.
Published: (2021-06-01)

Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs
by: Ankit Soni, et al.
Published: (2022-01-01)

Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier
by: Yueh-Tsung Shieh, et al.
Published: (2022-04-01)

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
by: Moath Alathbah, et al.
Published: (2022-11-01)

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT
by: Xiaoyu Ding, et al.
Published: (2023-03-01)

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT
by: Rui Gao, et al.
Published: (2020-01-01)

A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs
by: He Guan, et al.
Published: (2021-01-01)

Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application
by: Yajing Zhang, et al.
Published: (2022-10-01)

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
by: Xiazhi Zou, et al.
Published: (2023-10-01)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01)

Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT
by: Yijun Shi, et al.
Published: (2021-01-01)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
by: Wen Wang, et al.
Published: (2018-01-01)

AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate
by: Indraneel Sanyal, et al.
Published: (2021-01-01)

5 Watt GaN HEMT Power Amplifier for LTE
by: K. Niotaki, et al.
Published: (2014-04-01)

A 5-Bit X-Band GaN HEMT-Based Phase Shifter
by: Hsien-Chin Chiu, et al.
Published: (2021-03-01)

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters
by: Adrian Valeriu Pirosca, et al.
Published: (2023-03-01)

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench
by: Zeheng Wang, et al.
Published: (2019-07-01)

Junction temperature prediction method of GaN HEMT power devices based on accurate on-voltage testing
by: Haihong Qin, et al.
Published: (2023-11-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
by: Yusnizam Yusuf, et al.
Published: (2023-01-01)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
by: Jeong-Gil Kim, et al.
Published: (2022-01-01)

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
by: J. He, et al.
Published: (2019-01-01)

Novel super junction technique used in AlGaN/GaN HEMT for high power applications
by: A Arunraja, et al.
Published: (2022-01-01)

Analysis and improvement of self-heating effect based on GaN HEMT devices
by: Zhipeng Zuo, et al.
Published: (2022-01-01)