Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer
It is well-known that the quantum efficiency (QE) of inverted AlGaInP solar cells is less than that of upright ones, and the mechanism has not been well-explained. In this paper, a Si-doped AlInP window layer, compared with an emitter layer, is revealed to be one more important factor that decreases...
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MDPI AG
2022-06-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/9/6/404 |
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| author | Ge Li Hongbo Lu Xinyi Li Wei Zhang |
| author_facet | Ge Li Hongbo Lu Xinyi Li Wei Zhang |
| author_sort | Ge Li |
| collection | DOAJ |
| description | It is well-known that the quantum efficiency (QE) of inverted AlGaInP solar cells is less than that of upright ones, and the mechanism has not been well-explained. In this paper, a Si-doped AlInP window layer, compared with an emitter layer, is revealed to be one more important factor that decreases QE. It is noted that the quality of a heavily Si-doped AlInP window layer would decrease and further deteriorate subsequent active layers. An optimization strategy of a Si-doped AlInP window layer is proposed, which proves effective through time-resolved photoluminescence measurements (TRPL) of double heterojunctions. Inverted 2.1 eV AlGaInP solar cells with an improved AlInP window layer are fabricated. A 60 mV Voc increment is achieved with a remarkable enhancement of the fill factor from 0.789 to 0.827. An enhanced QE of 10% to 20% is achieved at short-wavelength and the peak IQE rises from 83.3% to 88.2%, which presents a nearly identical IQE compared with the upright reference. Further optimization in GaAs homojunction sub-cells is performed by introducing an n-GaInP/p-GaAs heterojunction structure, which decreases the recombination loss in the emitter caused by a poor AlInP window layer. The optimized structure significantly improves the Voc of the inverted GaAs-based T-3J solar cells to 3830 mV, boosting the efficiency of SBT five-junction solar cells to 35.61% under AM0 illumination. |
| first_indexed | 2024-03-09T22:43:41Z |
| format | Article |
| id | doaj.art-97413df55020426aa574fa1736635887 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T22:43:41Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
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| series | Photonics |
| spelling | doaj.art-97413df55020426aa574fa17366358872023-11-23T18:33:02ZengMDPI AGPhotonics2304-67322022-06-019640410.3390/photonics9060404Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window LayerGe Li0Hongbo Lu1Xinyi Li2Wei Zhang3State Key Laboratory of Space Power-Sources, Shanghai 200245, ChinaState Key Laboratory of Space Power-Sources, Shanghai 200245, ChinaState Key Laboratory of Space Power-Sources, Shanghai 200245, ChinaState Key Laboratory of Space Power-Sources, Shanghai 200245, ChinaIt is well-known that the quantum efficiency (QE) of inverted AlGaInP solar cells is less than that of upright ones, and the mechanism has not been well-explained. In this paper, a Si-doped AlInP window layer, compared with an emitter layer, is revealed to be one more important factor that decreases QE. It is noted that the quality of a heavily Si-doped AlInP window layer would decrease and further deteriorate subsequent active layers. An optimization strategy of a Si-doped AlInP window layer is proposed, which proves effective through time-resolved photoluminescence measurements (TRPL) of double heterojunctions. Inverted 2.1 eV AlGaInP solar cells with an improved AlInP window layer are fabricated. A 60 mV Voc increment is achieved with a remarkable enhancement of the fill factor from 0.789 to 0.827. An enhanced QE of 10% to 20% is achieved at short-wavelength and the peak IQE rises from 83.3% to 88.2%, which presents a nearly identical IQE compared with the upright reference. Further optimization in GaAs homojunction sub-cells is performed by introducing an n-GaInP/p-GaAs heterojunction structure, which decreases the recombination loss in the emitter caused by a poor AlInP window layer. The optimized structure significantly improves the Voc of the inverted GaAs-based T-3J solar cells to 3830 mV, boosting the efficiency of SBT five-junction solar cells to 35.61% under AM0 illumination.https://www.mdpi.com/2304-6732/9/6/404III-V solar cellmulti-junctiongrowth temperatureheterojunctionwindow layer |
| spellingShingle | Ge Li Hongbo Lu Xinyi Li Wei Zhang Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer Photonics III-V solar cell multi-junction growth temperature heterojunction window layer |
| title | Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer |
| title_full | Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer |
| title_fullStr | Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer |
| title_full_unstemmed | Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer |
| title_short | Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer |
| title_sort | improving the performance of direct bonded five junction solar cells by optimization of alinp window layer |
| topic | III-V solar cell multi-junction growth temperature heterojunction window layer |
| url | https://www.mdpi.com/2304-6732/9/6/404 |
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