Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction
Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed microcavity and large-bandgap, is the largest potential constituent for constructing droop-free and high-brightness ultraviolet light sources. In this study, we reported a workable scheme to construct high-monochromati...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-11-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723008586 |
| _version_ | 1797615938416148480 |
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| author | Lingling Sun Jitao Li Jiajia Han Maosheng Liu Ming Meng Binghui Li Mingming Jiang |
| author_facet | Lingling Sun Jitao Li Jiajia Han Maosheng Liu Ming Meng Binghui Li Mingming Jiang |
| author_sort | Lingling Sun |
| collection | DOAJ |
| description | Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed microcavity and large-bandgap, is the largest potential constituent for constructing droop-free and high-brightness ultraviolet light sources. In this study, we reported a workable scheme to construct high-monochromatic ultraviolet electroluminescence devices including a Ga-doped ZnO microwire decoated with platinum nanoparticles (PtNPs@ZnO:Ga MW), an AlN electron blocking layer and p-GaN layer substrate. The device exhibits a robust narrow-band ultraviolet electroluminescence peaking at around 374.8 nm and a narrowing bandwidth ∼ 13.5 nm. The electroluminescence profile is comparable with photoluminescence spectrum of ZnO:Ga MW. The device properties can be interpreted by the working mechanism of plasmonic effects, heterojunction interface engineering and optimization strategies. The AlN intermediate layer appeared in the optimized device enables effectively to tune the paths of current traveling and carrier recombination, yielding the band-edge luminescence of ZnO:Ga MW. As the device is further modified using PtNPs with desired plasmons, the optimization of heterojunction interface is significantly boosted, like the observable enhancement of holes injection efficiency, electroluminescence efficiency and interface contact, etc. Thereby, the boosted band-edge luminescence of ZnO:Ga MW can contribute to the well-being of the enhanced ultraviolet electroluminescence in our constructed LED devices. The findings are looking forward to bringing new opportunities toward the implementation of ultra-bright and high-efficiency narrow-band ultraviolet light sources, especially for the achievement of electrically-pumped microlaser devices. |
| first_indexed | 2024-03-11T07:34:06Z |
| format | Article |
| id | doaj.art-9779d08b3dfb478286fb9597ba8d9492 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-11T07:34:06Z |
| publishDate | 2023-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-9779d08b3dfb478286fb9597ba8d94922023-11-17T05:26:24ZengElsevierResults in Physics2211-37972023-11-0154107065Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunctionLingling Sun0Jitao Li1Jiajia Han2Maosheng Liu3Ming Meng4Binghui Li5Mingming Jiang6School of Physics and Telecommunications Engineering, Zhoukou Normal University, Zhoukou 466001, ChinaSchool of Physics and Telecommunications Engineering, Zhoukou Normal University, Zhoukou 466001, China; The Key Laboratory of Rare Earth Functional Materials of Henan Province, Zhoukou Normal University, Zhoukou 466001, ChinaSchool of Physics and Telecommunications Engineering, Zhoukou Normal University, Zhoukou 466001, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, ChinaSchool of Physics and Telecommunications Engineering, Zhoukou Normal University, Zhoukou 466001, China; The Key Laboratory of Rare Earth Functional Materials of Henan Province, Zhoukou Normal University, Zhoukou 466001, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China; Corresponding author.Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed microcavity and large-bandgap, is the largest potential constituent for constructing droop-free and high-brightness ultraviolet light sources. In this study, we reported a workable scheme to construct high-monochromatic ultraviolet electroluminescence devices including a Ga-doped ZnO microwire decoated with platinum nanoparticles (PtNPs@ZnO:Ga MW), an AlN electron blocking layer and p-GaN layer substrate. The device exhibits a robust narrow-band ultraviolet electroluminescence peaking at around 374.8 nm and a narrowing bandwidth ∼ 13.5 nm. The electroluminescence profile is comparable with photoluminescence spectrum of ZnO:Ga MW. The device properties can be interpreted by the working mechanism of plasmonic effects, heterojunction interface engineering and optimization strategies. The AlN intermediate layer appeared in the optimized device enables effectively to tune the paths of current traveling and carrier recombination, yielding the band-edge luminescence of ZnO:Ga MW. As the device is further modified using PtNPs with desired plasmons, the optimization of heterojunction interface is significantly boosted, like the observable enhancement of holes injection efficiency, electroluminescence efficiency and interface contact, etc. Thereby, the boosted band-edge luminescence of ZnO:Ga MW can contribute to the well-being of the enhanced ultraviolet electroluminescence in our constructed LED devices. The findings are looking forward to bringing new opportunities toward the implementation of ultra-bright and high-efficiency narrow-band ultraviolet light sources, especially for the achievement of electrically-pumped microlaser devices.http://www.sciencedirect.com/science/article/pii/S2211379723008586Narrow-band ultraviolet LEDZnO:Ga microwiresAlN buffer layerPtNPs plasmonsMicrocavity effectInterface engineering |
| spellingShingle | Lingling Sun Jitao Li Jiajia Han Maosheng Liu Ming Meng Binghui Li Mingming Jiang Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction Results in Physics Narrow-band ultraviolet LED ZnO:Ga microwires AlN buffer layer PtNPs plasmons Microcavity effect Interface engineering |
| title | Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction |
| title_full | Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction |
| title_fullStr | Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction |
| title_full_unstemmed | Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction |
| title_short | Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction |
| title_sort | interfacial engineering boosted narrow band ultraviolet led based on n ptnps zno ga microwire aln p gan heterojunction |
| topic | Narrow-band ultraviolet LED ZnO:Ga microwires AlN buffer layer PtNPs plasmons Microcavity effect Interface engineering |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723008586 |
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