The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity
In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/3/348 |
| _version_ | 1797472159679905792 |
|---|---|
| author | Jing Zhou Peng Chen Zili Xie Xiangqian Xiu Dunjun Chen Ping Han Yi Shi Rong Zhang Youdou Zheng |
| author_facet | Jing Zhou Peng Chen Zili Xie Xiangqian Xiu Dunjun Chen Ping Han Yi Shi Rong Zhang Youdou Zheng |
| author_sort | Jing Zhou |
| collection | DOAJ |
| description | In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10°. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity. |
| first_indexed | 2024-03-09T19:58:12Z |
| format | Article |
| id | doaj.art-977cd97faf2b4029ae76b5f2bf28660f |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T19:58:12Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-977cd97faf2b4029ae76b5f2bf28660f2023-11-24T00:51:30ZengMDPI AGCrystals2073-43522022-03-0112334810.3390/cryst12030348The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge CavityJing Zhou0Peng Chen1Zili Xie2Xiangqian Xiu3Dunjun Chen4Ping Han5Yi Shi6Rong Zhang7Youdou Zheng8Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, ChinaIn this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10°. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity.https://www.mdpi.com/2073-4352/12/3/348excitoncavityInGaNexciton-photon coupling |
| spellingShingle | Jing Zhou Peng Chen Zili Xie Xiangqian Xiu Dunjun Chen Ping Han Yi Shi Rong Zhang Youdou Zheng The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity Crystals exciton cavity InGaN exciton-photon coupling |
| title | The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity |
| title_full | The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity |
| title_fullStr | The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity |
| title_full_unstemmed | The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity |
| title_short | The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity |
| title_sort | sign of exciton photon coupling in gan based triangular like ridge cavity |
| topic | exciton cavity InGaN exciton-photon coupling |
| url | https://www.mdpi.com/2073-4352/12/3/348 |
| work_keys_str_mv | AT jingzhou thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT pengchen thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT zilixie thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT xiangqianxiu thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT dunjunchen thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT pinghan thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT yishi thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT rongzhang thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT youdouzheng thesignofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT jingzhou signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT pengchen signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT zilixie signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT xiangqianxiu signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT dunjunchen signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT pinghan signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT yishi signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT rongzhang signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity AT youdouzheng signofexcitonphotoncouplinginganbasedtriangularlikeridgecavity |