Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection
Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3017-8 |
| _version_ | 1827838548747747328 |
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| author | Zhuo Wang Zhao Qi Longfei Liang Ming Qiao Zhaoji Li Bo Zhang |
| author_facet | Zhuo Wang Zhao Qi Longfei Liang Ming Qiao Zhaoji Li Bo Zhang |
| author_sort | Zhuo Wang |
| collection | DOAJ |
| description | Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). Compared with the measured V h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved. |
| first_indexed | 2024-03-12T07:06:20Z |
| format | Article |
| id | doaj.art-9788482badf545709185ceb2ae7d5f5a |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:06:20Z |
| publishDate | 2019-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-9788482badf545709185ceb2ae7d5f5a2023-09-02T23:24:02ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-011411710.1186/s11671-019-3017-8Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD ProtectionZhuo Wang0Zhao Qi1Longfei Liang2Ming Qiao3Zhaoji Li4Bo Zhang5State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaAbstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). Compared with the measured V h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.http://link.springer.com/article/10.1186/s11671-019-3017-8Electrostatic discharge (ESD)Silicon-controlled rectifier (SCR)Holding voltage (V h)Latch-upTransmission line pulse (TLP) |
| spellingShingle | Zhuo Wang Zhao Qi Longfei Liang Ming Qiao Zhaoji Li Bo Zhang Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection Nanoscale Research Letters Electrostatic discharge (ESD) Silicon-controlled rectifier (SCR) Holding voltage (V h) Latch-up Transmission line pulse (TLP) |
| title | Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection |
| title_full | Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection |
| title_fullStr | Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection |
| title_full_unstemmed | Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection |
| title_short | Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection |
| title_sort | novel high holding voltage scr with embedded carrier recombination structure for latch up immune and robust esd protection |
| topic | Electrostatic discharge (ESD) Silicon-controlled rectifier (SCR) Holding voltage (V h) Latch-up Transmission line pulse (TLP) |
| url | http://link.springer.com/article/10.1186/s11671-019-3017-8 |
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