Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy
Hexagonal 2H polytypes of Si (2H-Si) exhibit promising mechanical and optical properties owing to their crystal structures with quasi-direct bandgap characteristics. However, few studies have investigated the electrical properties of 2H-Si semiconductors. In this study, we used a hot-probe measureme...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-09-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379722005010 |
| _version_ | 1828150606221541376 |
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| author | Seungheon Shin Kyoung Hwa Kim Gang Seok Lee Jae Hak Lee Hyung Soo Ahn Ho-Young Cha |
| author_facet | Seungheon Shin Kyoung Hwa Kim Gang Seok Lee Jae Hak Lee Hyung Soo Ahn Ho-Young Cha |
| author_sort | Seungheon Shin |
| collection | DOAJ |
| description | Hexagonal 2H polytypes of Si (2H-Si) exhibit promising mechanical and optical properties owing to their crystal structures with quasi-direct bandgap characteristics. However, few studies have investigated the electrical properties of 2H-Si semiconductors. In this study, we used a hot-probe measurement to determine the doping type of 2H-Si microwires (MWs) prepared by hydride vapor-phase epitaxy (HVPE). It was found that the 2H-Si MWs had unintentional n-type characteristics. For the first time, a heterojunction PN diode with n-type 2H-Si MW and p-type Si (100) was fabricated. According to the current–voltage and capacitance–voltage measurements, the n-type doping concentration of the unintentionally doped 2H-Si MWs was 4.3–9.5 × 1015 cm−3 and the electron mobility was 260–580 cm2/V·s. |
| first_indexed | 2024-04-11T21:46:02Z |
| format | Article |
| id | doaj.art-97b404d3b91f46bc8f6e062e42b2c71e |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-11T21:46:02Z |
| publishDate | 2022-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-97b404d3b91f46bc8f6e062e42b2c71e2022-12-22T04:01:25ZengElsevierResults in Physics2211-37972022-09-0140105857Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxySeungheon Shin0Kyoung Hwa Kim1Gang Seok Lee2Jae Hak Lee3Hyung Soo Ahn4Ho-Young Cha5School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, South KoreaDepartment of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, South KoreaDepartment of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, South KoreaDepartment of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, South KoreaDepartment of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, South KoreaSchool of Electronic and Electrical Engineering, Hongik University, Seoul 04066, South Korea; Corresponding author.Hexagonal 2H polytypes of Si (2H-Si) exhibit promising mechanical and optical properties owing to their crystal structures with quasi-direct bandgap characteristics. However, few studies have investigated the electrical properties of 2H-Si semiconductors. In this study, we used a hot-probe measurement to determine the doping type of 2H-Si microwires (MWs) prepared by hydride vapor-phase epitaxy (HVPE). It was found that the 2H-Si MWs had unintentional n-type characteristics. For the first time, a heterojunction PN diode with n-type 2H-Si MW and p-type Si (100) was fabricated. According to the current–voltage and capacitance–voltage measurements, the n-type doping concentration of the unintentionally doped 2H-Si MWs was 4.3–9.5 × 1015 cm−3 and the electron mobility was 260–580 cm2/V·s.http://www.sciencedirect.com/science/article/pii/S2211379722005010Hexagonal lonsdaleite silicon2H-SiHVPEHeterojunction PN diodeElectrical propertiesHot probe measurement |
| spellingShingle | Seungheon Shin Kyoung Hwa Kim Gang Seok Lee Jae Hak Lee Hyung Soo Ahn Ho-Young Cha Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy Results in Physics Hexagonal lonsdaleite silicon 2H-Si HVPE Heterojunction PN diode Electrical properties Hot probe measurement |
| title | Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy |
| title_full | Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy |
| title_fullStr | Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy |
| title_full_unstemmed | Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy |
| title_short | Electrical properties of 2H-Si microwire grown by mixed-source hydride vapor phase epitaxy |
| title_sort | electrical properties of 2h si microwire grown by mixed source hydride vapor phase epitaxy |
| topic | Hexagonal lonsdaleite silicon 2H-Si HVPE Heterojunction PN diode Electrical properties Hot probe measurement |
| url | http://www.sciencedirect.com/science/article/pii/S2211379722005010 |
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