Suppression of Dissolution Rate via Coordination Complex in Tungsten Chemical Mechanical Planarization
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm semiconductor applications. However, excessive tungsten di...
| Үндсэн зохиолчид: | , |
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| Формат: | Өгүүллэг |
| Хэл сонгох: | English |
| Хэвлэсэн: |
MDPI AG
2022-01-01
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| Цуврал: | Applied Sciences |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2076-3417/12/3/1227 |