Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS<sub>2</sub...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/6/882 |
| _version_ | 1818303061701951488 |
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| author | Yonatan Vaknin Ronen Dagan Yossi Rosenwaks |
| author_facet | Yonatan Vaknin Ronen Dagan Yossi Rosenwaks |
| author_sort | Yonatan Vaknin |
| collection | DOAJ |
| description | The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS<sub>2</sub>), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS<sub>2</sub> FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS<sub>2</sub> FET and a few-layer MoS<sub>2</sub> FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices. |
| first_indexed | 2024-12-13T05:48:49Z |
| format | Article |
| id | doaj.art-97bced130df242839b86fe6b2a0eda91 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-13T05:48:49Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-97bced130df242839b86fe6b2a0eda912022-12-21T23:57:37ZengMDPI AGNanomaterials2079-49912019-06-019688210.3390/nano9060882nano9060882Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect TransistorsYonatan Vaknin0Ronen Dagan1Yossi Rosenwaks2School of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, IsraelSchool of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, IsraelSchool of Electrical Engineering, Tel-Aviv University, Tel-Aviv 69978, IsraelThe discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS<sub>2</sub>), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS<sub>2</sub> FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS<sub>2</sub> FET and a few-layer MoS<sub>2</sub> FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.https://www.mdpi.com/2079-4991/9/6/8822D materialsKPFMMoS<sub>2</sub>pinch-off |
| spellingShingle | Yonatan Vaknin Ronen Dagan Yossi Rosenwaks Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors Nanomaterials 2D materials KPFM MoS<sub>2</sub> pinch-off |
| title | Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors |
| title_full | Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors |
| title_fullStr | Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors |
| title_full_unstemmed | Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors |
| title_short | Pinch-Off Formation in Monolayer and Multilayers MoS<sub>2</sub> Field-Effect Transistors |
| title_sort | pinch off formation in monolayer and multilayers mos sub 2 sub field effect transistors |
| topic | 2D materials KPFM MoS<sub>2</sub> pinch-off |
| url | https://www.mdpi.com/2079-4991/9/6/882 |
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