A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology
A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor’s resolution, a folded cascode error amplifier (EA) was connected to the outer loop of t...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-12-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/22/24/9672 |
| _version_ | 1827636959069077504 |
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| author | Jun-Hee Lee Mun-Kyo Lee Jung-Dong Park |
| author_facet | Jun-Hee Lee Mun-Kyo Lee Jung-Dong Park |
| author_sort | Jun-Hee Lee |
| collection | DOAJ |
| description | A direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor’s resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response. The flipped voltage follower with a super source follower forms a fast feedback loop. The stability and parameter variation sensitivity of the multi-loop FVF LDO were analyzed through the state matrix decomposition. We implemented the FVF LDO in TSMC 65 nm CMOS technology. The fabricated FVF LDO supplied a maximum load current of 20 mA with a 1.2 V power supply. The proposed FVF LDO achieved a full-spectrum PSR with a low-frequency PSRR of 66 dB, unity-gain bandwidth of 469 MHz, and 20 ns transient settling time with a load current step from 1 mA to 20 mA. |
| first_indexed | 2024-03-09T15:52:44Z |
| format | Article |
| id | doaj.art-97ce27b7019a4ad5bb4c3dc02e7a9cda |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T15:52:44Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-97ce27b7019a4ad5bb4c3dc02e7a9cda2023-11-24T17:53:28ZengMDPI AGSensors1424-82202022-12-012224967210.3390/s22249672A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS TechnologyJun-Hee Lee0Mun-Kyo Lee1Jung-Dong Park2Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaYongin Research Institute, Hanwha Systems, Yongin-si 17121, Republic of KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of KoreaA direct feedback flipped voltage follower (FVF) LDO for a high-precision frequency-modulated continuous-wave (FMCW) radar is presented. To minimize the effect of the power supply ripple on the FMCW radar sensor’s resolution, a folded cascode error amplifier (EA) was connected to the outer loop of the FVF to increase the open-loop gain. The direct feedback structure enhances the PSRR while minimizing the power supply ripple path and not compromising a transient response. The flipped voltage follower with a super source follower forms a fast feedback loop. The stability and parameter variation sensitivity of the multi-loop FVF LDO were analyzed through the state matrix decomposition. We implemented the FVF LDO in TSMC 65 nm CMOS technology. The fabricated FVF LDO supplied a maximum load current of 20 mA with a 1.2 V power supply. The proposed FVF LDO achieved a full-spectrum PSR with a low-frequency PSRR of 66 dB, unity-gain bandwidth of 469 MHz, and 20 ns transient settling time with a load current step from 1 mA to 20 mA.https://www.mdpi.com/1424-8220/22/24/9672CMOSlow-dropout regulatorflipped voltage followerlarge loop gainfast transienthigh unity-gain bandwidth |
| spellingShingle | Jun-Hee Lee Mun-Kyo Lee Jung-Dong Park A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology Sensors CMOS low-dropout regulator flipped voltage follower large loop gain fast transient high unity-gain bandwidth |
| title | A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology |
| title_full | A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology |
| title_fullStr | A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology |
| title_full_unstemmed | A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology |
| title_short | A Direct Feedback FVF LDO for High Precision FMCW Radar Sensors in 65-nm CMOS Technology |
| title_sort | direct feedback fvf ldo for high precision fmcw radar sensors in 65 nm cmos technology |
| topic | CMOS low-dropout regulator flipped voltage follower large loop gain fast transient high unity-gain bandwidth |
| url | https://www.mdpi.com/1424-8220/22/24/9672 |
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