The Sensing Mechanism of InAlN/GaN HEMT

The Sensing Mechanism of InAlN/GaN HEMT

The sensing mechanism of InAlN/GaN high electron mobility transistors (HEMTs) is investigated systematically by numerical simulation and theoretical analysis. In detail, the influence of additional surface charge on device performance and the dependence of surface sensing properties on InAlN barrier...

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Bibliographic Details
Main Authors:	Yanli Liu, Xiao He, Yan Dong, Su Fu, Yuhui Liu, Dunjun Chen
Format:	Article
Language:	English
Published:	MDPI AG 2022-03-01
Series:	Crystals
Subjects:	surface charge InAlN/GaN HEMT surface sensitivity
Online Access:	https://www.mdpi.com/2073-4352/12/3/401

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