Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the...
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Institute for Condensed Matter Physics
2015-12-01
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Series: | Condensed Matter Physics |
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Online Access: | http://dx.doi.org/10.5488/CMP.18.43801 |
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author | R.M. Peleshchak O.V. Kuzyk O.O. Dan'kiv |
author_facet | R.M. Peleshchak O.V. Kuzyk O.O. Dan'kiv |
author_sort | R.M. Peleshchak |
collection | DOAJ |
description | The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation. |
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format | Article |
id | doaj.art-97e32bcb8fb040bd8f48d59c6b980c82 |
institution | Directory Open Access Journal |
issn | 1607-324X |
language | English |
last_indexed | 2024-12-23T14:45:34Z |
publishDate | 2015-12-01 |
publisher | Institute for Condensed Matter Physics |
record_format | Article |
series | Condensed Matter Physics |
spelling | doaj.art-97e32bcb8fb040bd8f48d59c6b980c822022-12-21T17:43:05ZengInstitute for Condensed Matter PhysicsCondensed Matter Physics1607-324X2015-12-011844380110.5488/CMP.18.43801Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiationR.M. Peleshchak O.V. Kuzyk O.O. Dan'kivThe theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.http://dx.doi.org/10.5488/CMP.18.43801nanoclustertemperaturediffusiondeformation |
spellingShingle | R.M. Peleshchak O.V. Kuzyk O.O. Dan'kiv Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation Condensed Matter Physics nanocluster temperature diffusion deformation |
title | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation |
title_full | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation |
title_fullStr | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation |
title_full_unstemmed | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation |
title_short | Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation |
title_sort | temperature regimes of formation of nanometer periodic structure of adsorbed atoms in gaas semiconductors under the action of laser irradiation |
topic | nanocluster temperature diffusion deformation |
url | http://dx.doi.org/10.5488/CMP.18.43801 |
work_keys_str_mv | AT rmpeleshchak temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation AT ovkuzyk temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation AT oodankiv temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation |