Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the...

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Main Authors: R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv
Format: Article
Language:English
Published: Institute for Condensed Matter Physics 2015-12-01
Series:Condensed Matter Physics
Subjects:
Online Access:http://dx.doi.org/10.5488/CMP.18.43801
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author R.M. Peleshchak
O.V. Kuzyk
O.O. Dan'kiv
author_facet R.M. Peleshchak
O.V. Kuzyk
O.O. Dan'kiv
author_sort R.M. Peleshchak
collection DOAJ
description The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.
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spelling doaj.art-97e32bcb8fb040bd8f48d59c6b980c822022-12-21T17:43:05ZengInstitute for Condensed Matter PhysicsCondensed Matter Physics1607-324X2015-12-011844380110.5488/CMP.18.43801Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiationR.M. Peleshchak O.V. Kuzyk O.O. Dan'kivThe theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on n-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.http://dx.doi.org/10.5488/CMP.18.43801nanoclustertemperaturediffusiondeformation
spellingShingle R.M. Peleshchak
O.V. Kuzyk
O.O. Dan'kiv
Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
Condensed Matter Physics
nanocluster
temperature
diffusion
deformation
title Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
title_full Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
title_fullStr Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
title_full_unstemmed Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
title_short Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation
title_sort temperature regimes of formation of nanometer periodic structure of adsorbed atoms in gaas semiconductors under the action of laser irradiation
topic nanocluster
temperature
diffusion
deformation
url http://dx.doi.org/10.5488/CMP.18.43801
work_keys_str_mv AT rmpeleshchak temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation
AT ovkuzyk temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation
AT oodankiv temperatureregimesofformationofnanometerperiodicstructureofadsorbedatomsingaassemiconductorsundertheactionoflaserirradiation