Spontaneous current constriction in threshold switching devices
Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2019-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-09679-9 |
| _version_ | 1818342183344799744 |
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| author | Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski |
| author_facet | Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski |
| author_sort | Jonathan M. Goodwill |
| collection | DOAJ |
| description | Today the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required. |
| first_indexed | 2024-12-13T16:10:38Z |
| format | Article |
| id | doaj.art-97f7a07a55ec43febc4d159255dbad9d |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-13T16:10:38Z |
| publishDate | 2019-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-97f7a07a55ec43febc4d159255dbad9d2022-12-21T23:38:57ZengNature PortfolioNature Communications2041-17232019-04-011011810.1038/s41467-019-09679-9Spontaneous current constriction in threshold switching devicesJonathan M. Goodwill0Georg Ramer1Dasheng Li2Brian D. Hoskins3Georges Pavlidis4Jabez J. McClelland5Andrea Centrone6James A. Bain7Marek Skowronski8Department of Materials Science and Engineering, Carnegie Mellon UniversityNanoscale Device Characterization Division, Physical Measurements Laboratory, National Institute of Standards and TechnologyDepartment of Materials Science and Engineering, Carnegie Mellon UniversityNanoscale Device Characterization Division, Physical Measurements Laboratory, National Institute of Standards and TechnologyNanoscale Device Characterization Division, Physical Measurements Laboratory, National Institute of Standards and TechnologyNanoscale Device Characterization Division, Physical Measurements Laboratory, National Institute of Standards and TechnologyNanoscale Device Characterization Division, Physical Measurements Laboratory, National Institute of Standards and TechnologyDepartment of Electrical and Computer Engineering, Carnegie Mellon UniversityDepartment of Materials Science and Engineering, Carnegie Mellon UniversityToday the phenomenon underlying threshold switching of Oxide-based resistive memories is an unresolved debate. Here, the authors report that the TaOx-based conductive filament formation, the current density and temperature are not-uniform distributions and electric field domains are not required.https://doi.org/10.1038/s41467-019-09679-9 |
| spellingShingle | Jonathan M. Goodwill Georg Ramer Dasheng Li Brian D. Hoskins Georges Pavlidis Jabez J. McClelland Andrea Centrone James A. Bain Marek Skowronski Spontaneous current constriction in threshold switching devices Nature Communications |
| title | Spontaneous current constriction in threshold switching devices |
| title_full | Spontaneous current constriction in threshold switching devices |
| title_fullStr | Spontaneous current constriction in threshold switching devices |
| title_full_unstemmed | Spontaneous current constriction in threshold switching devices |
| title_short | Spontaneous current constriction in threshold switching devices |
| title_sort | spontaneous current constriction in threshold switching devices |
| url | https://doi.org/10.1038/s41467-019-09679-9 |
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