Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection

Abstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted c...

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Main Authors: Zhuo Dong, Wenzhi Yu, Libo Zhang, Liu Yang, Luyi Huang, Yan Zhang, Zeqian Ren, Haoran Mu, Cheng Chen, Junrong Zhang, Jie Li, Lin Wang, Kai Zhang
Format: Article
Language:English
Published: Wiley 2023-05-01
Series:InfoMat
Subjects:
Online Access:https://doi.org/10.1002/inf2.12403
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author Zhuo Dong
Wenzhi Yu
Libo Zhang
Liu Yang
Luyi Huang
Yan Zhang
Zeqian Ren
Haoran Mu
Cheng Chen
Junrong Zhang
Jie Li
Lin Wang
Kai Zhang
author_facet Zhuo Dong
Wenzhi Yu
Libo Zhang
Liu Yang
Luyi Huang
Yan Zhang
Zeqian Ren
Haoran Mu
Cheng Chen
Junrong Zhang
Jie Li
Lin Wang
Kai Zhang
author_sort Zhuo Dong
collection DOAJ
description Abstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted considerable research interest in THz detection due to its unique physical properties. However, to achieve practical applications, the low‐cost, large‐scale, controllable synthesis and efficient patterning of 2D materials are key requirements, which remain a challenge for PtTe2 and its photodetectors (PDs). Herein, a facile approach is developed to obtain wafer‐scale (2‐inches) patterned PtTe2 arrays using one‐step tellurium‐vapor transformation method and micro‐Nano technology. PtTe2 PD arrays are fabricated with the as‐grown PtTe2 arrays evenly distributed on a 2‐inch wafer, exhibiting high conductivity (~2.7 × 105 S m−1) and good electrical consistency. Driven by the Dirac fermions, PtTe2 PDs achieve a broadband (0.02–0.3 THz) response with a fast response speed (~4.7 μs), a high sensitivity (~47 pW Hz−1/2) and high‐resolution transmission THz‐imaging capability, which displays the potential of large‐area THz array imaging. These results are one step towards the practical applications of integrated PD arrays based on 2D materials.
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spelling doaj.art-9839662d392047ba9854a24faf8172d02023-05-29T04:32:42ZengWileyInfoMat2567-31652023-05-0155n/an/a10.1002/inf2.12403Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetectionZhuo Dong0Wenzhi Yu1Libo Zhang2Liu Yang3Luyi Huang4Yan Zhang5Zeqian Ren6Haoran Mu7Cheng Chen8Junrong Zhang9Jie Li10Lin Wang11Kai Zhang12CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaSongshan Lake Materials Laboratory Dongguan Guangdong the People's Republic of ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaSongshan Lake Materials Laboratory Dongguan Guangdong the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaAbstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted considerable research interest in THz detection due to its unique physical properties. However, to achieve practical applications, the low‐cost, large‐scale, controllable synthesis and efficient patterning of 2D materials are key requirements, which remain a challenge for PtTe2 and its photodetectors (PDs). Herein, a facile approach is developed to obtain wafer‐scale (2‐inches) patterned PtTe2 arrays using one‐step tellurium‐vapor transformation method and micro‐Nano technology. PtTe2 PD arrays are fabricated with the as‐grown PtTe2 arrays evenly distributed on a 2‐inch wafer, exhibiting high conductivity (~2.7 × 105 S m−1) and good electrical consistency. Driven by the Dirac fermions, PtTe2 PDs achieve a broadband (0.02–0.3 THz) response with a fast response speed (~4.7 μs), a high sensitivity (~47 pW Hz−1/2) and high‐resolution transmission THz‐imaging capability, which displays the potential of large‐area THz array imaging. These results are one step towards the practical applications of integrated PD arrays based on 2D materials.https://doi.org/10.1002/inf2.12403patterned growthphotodetectionplatinum ditellurideterahertzwafer‐scale
spellingShingle Zhuo Dong
Wenzhi Yu
Libo Zhang
Liu Yang
Luyi Huang
Yan Zhang
Zeqian Ren
Haoran Mu
Cheng Chen
Junrong Zhang
Jie Li
Lin Wang
Kai Zhang
Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
InfoMat
patterned growth
photodetection
platinum ditelluride
terahertz
wafer‐scale
title Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
title_full Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
title_fullStr Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
title_full_unstemmed Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
title_short Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
title_sort wafer scale patterned growth of type ii dirac semimetal platinum ditelluride for sensitive room temperature terahertz photodetection
topic patterned growth
photodetection
platinum ditelluride
terahertz
wafer‐scale
url https://doi.org/10.1002/inf2.12403
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