Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection
Abstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted c...
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Wiley
2023-05-01
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Online Access: | https://doi.org/10.1002/inf2.12403 |
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author | Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang |
author_facet | Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang |
author_sort | Zhuo Dong |
collection | DOAJ |
description | Abstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted considerable research interest in THz detection due to its unique physical properties. However, to achieve practical applications, the low‐cost, large‐scale, controllable synthesis and efficient patterning of 2D materials are key requirements, which remain a challenge for PtTe2 and its photodetectors (PDs). Herein, a facile approach is developed to obtain wafer‐scale (2‐inches) patterned PtTe2 arrays using one‐step tellurium‐vapor transformation method and micro‐Nano technology. PtTe2 PD arrays are fabricated with the as‐grown PtTe2 arrays evenly distributed on a 2‐inch wafer, exhibiting high conductivity (~2.7 × 105 S m−1) and good electrical consistency. Driven by the Dirac fermions, PtTe2 PDs achieve a broadband (0.02–0.3 THz) response with a fast response speed (~4.7 μs), a high sensitivity (~47 pW Hz−1/2) and high‐resolution transmission THz‐imaging capability, which displays the potential of large‐area THz array imaging. These results are one step towards the practical applications of integrated PD arrays based on 2D materials. |
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language | English |
last_indexed | 2024-03-13T08:54:31Z |
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spelling | doaj.art-9839662d392047ba9854a24faf8172d02023-05-29T04:32:42ZengWileyInfoMat2567-31652023-05-0155n/an/a10.1002/inf2.12403Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetectionZhuo Dong0Wenzhi Yu1Libo Zhang2Liu Yang3Luyi Huang4Yan Zhang5Zeqian Ren6Haoran Mu7Cheng Chen8Junrong Zhang9Jie Li10Lin Wang11Kai Zhang12CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaSongshan Lake Materials Laboratory Dongguan Guangdong the People's Republic of ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaSongshan Lake Materials Laboratory Dongguan Guangdong the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai the People's Republic of ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO), Chinese Academy of Sciences Suzhou Jiangsu the People's Republic of ChinaAbstract As the lastly unexplored electromagnetic wave, terahertz (THz) radiation has been exploited in a plenty of contexts such as fundamental research, military and civil fields. Most recently, representative two‐dimensional (2D) topological semimetal, platinum ditelluride (PtTe2) has attracted considerable research interest in THz detection due to its unique physical properties. However, to achieve practical applications, the low‐cost, large‐scale, controllable synthesis and efficient patterning of 2D materials are key requirements, which remain a challenge for PtTe2 and its photodetectors (PDs). Herein, a facile approach is developed to obtain wafer‐scale (2‐inches) patterned PtTe2 arrays using one‐step tellurium‐vapor transformation method and micro‐Nano technology. PtTe2 PD arrays are fabricated with the as‐grown PtTe2 arrays evenly distributed on a 2‐inch wafer, exhibiting high conductivity (~2.7 × 105 S m−1) and good electrical consistency. Driven by the Dirac fermions, PtTe2 PDs achieve a broadband (0.02–0.3 THz) response with a fast response speed (~4.7 μs), a high sensitivity (~47 pW Hz−1/2) and high‐resolution transmission THz‐imaging capability, which displays the potential of large‐area THz array imaging. These results are one step towards the practical applications of integrated PD arrays based on 2D materials.https://doi.org/10.1002/inf2.12403patterned growthphotodetectionplatinum ditellurideterahertzwafer‐scale |
spellingShingle | Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection InfoMat patterned growth photodetection platinum ditelluride terahertz wafer‐scale |
title | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection |
title_full | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection |
title_fullStr | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection |
title_full_unstemmed | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection |
title_short | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection |
title_sort | wafer scale patterned growth of type ii dirac semimetal platinum ditelluride for sensitive room temperature terahertz photodetection |
topic | patterned growth photodetection platinum ditelluride terahertz wafer‐scale |
url | https://doi.org/10.1002/inf2.12403 |
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