Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation lay...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0145286 |
| _version_ | 1797771851931320320 |
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| author | Shuoyang Qiu Jiarui Gong Jie Zhou Tien Khee Ng Ranveer Singh Moheb Sheikhi Boon S. Ooi Zhenqiang Ma |
| author_facet | Shuoyang Qiu Jiarui Gong Jie Zhou Tien Khee Ng Ranveer Singh Moheb Sheikhi Boon S. Ooi Zhenqiang Ma |
| author_sort | Shuoyang Qiu |
| collection | DOAJ |
| description | Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation layer and a quantum tunneling layer. On the other hand, with excellent thermal, mechanical, and electrical properties, ZrO2 serves as a high-k gate dielectric material in multiple applications, which is also of potential interest to applications in grafted GaN-based heterostructures. In this sense, understanding the interfacial band parameters of ultrathin ALD-ZrO2 is of great importance. In this work, the band-bending of Ga-polar GaN with ultrathin ALD-ZrO2 was studied by x-ray photoelectron spectroscopy (XPS). This study demonstrated that ZrO2 can effectively suppress upward band-bending from 0.88 to 0.48 eV at five deposition cycles. The bandgap values of ALD-ZrO2 at different thicknesses were also carefully studied. |
| first_indexed | 2024-03-12T21:42:33Z |
| format | Article |
| id | doaj.art-984aa804533e49d48c82693fd3320b71 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T21:42:33Z |
| publishDate | 2023-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-984aa804533e49d48c82693fd3320b712023-07-26T15:31:53ZengAIP Publishing LLCAIP Advances2158-32262023-05-01135055110055110-710.1063/5.0145286Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurementsShuoyang Qiu0Jiarui Gong1Jie Zhou2Tien Khee Ng3Ranveer Singh4Moheb Sheikhi5Boon S. Ooi6Zhenqiang Ma7Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi ArabiaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USADepartment of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi ArabiaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USARecent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation layer and a quantum tunneling layer. On the other hand, with excellent thermal, mechanical, and electrical properties, ZrO2 serves as a high-k gate dielectric material in multiple applications, which is also of potential interest to applications in grafted GaN-based heterostructures. In this sense, understanding the interfacial band parameters of ultrathin ALD-ZrO2 is of great importance. In this work, the band-bending of Ga-polar GaN with ultrathin ALD-ZrO2 was studied by x-ray photoelectron spectroscopy (XPS). This study demonstrated that ZrO2 can effectively suppress upward band-bending from 0.88 to 0.48 eV at five deposition cycles. The bandgap values of ALD-ZrO2 at different thicknesses were also carefully studied.http://dx.doi.org/10.1063/5.0145286 |
| spellingShingle | Shuoyang Qiu Jiarui Gong Jie Zhou Tien Khee Ng Ranveer Singh Moheb Sheikhi Boon S. Ooi Zhenqiang Ma Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements AIP Advances |
| title | Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| title_full | Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| title_fullStr | Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| title_full_unstemmed | Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| title_short | Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements |
| title_sort | interfacial band parameters of ultrathin ald zro2 on ga polar gan through xps measurements |
| url | http://dx.doi.org/10.1063/5.0145286 |
| work_keys_str_mv | AT shuoyangqiu interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT jiaruigong interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT jiezhou interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT tienkheeng interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT ranveersingh interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT mohebsheikhi interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT boonsooi interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements AT zhenqiangma interfacialbandparametersofultrathinaldzro2ongapolarganthroughxpsmeasurements |