Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation lay...
| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
AIP Publishing LLC
2023-05-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0145286 |