Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements

Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements

Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation lay...

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Bibliographic Details
Main Authors:	Shuoyang Qiu, Jiarui Gong, Jie Zhou, Tien Khee Ng, Ranveer Singh, Moheb Sheikhi, Boon S. Ooi, Zhenqiang Ma
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0145286

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