Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics
The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe<sub>2</sub> channel, coupled with an oxygen-deficient (OD)-HfO<sub>2</sub> layer structure. In these transistors, the application of negative gate pulses resulte...
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MDPI AG
2024-02-01
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| Series: | Inorganics |
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| Online Access: | https://www.mdpi.com/2304-6740/12/2/60 |
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| author | Jie Lu Zeyang Xiang Kexiang Wang Mengrui Shi Liuxuan Wu Fuyu Yan Ranping Li Zixuan Wang Huilin Jin Ran Jiang |
| author_facet | Jie Lu Zeyang Xiang Kexiang Wang Mengrui Shi Liuxuan Wu Fuyu Yan Ranping Li Zixuan Wang Huilin Jin Ran Jiang |
| author_sort | Jie Lu |
| collection | DOAJ |
| description | The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe<sub>2</sub> channel, coupled with an oxygen-deficient (OD)-HfO<sub>2</sub> layer structure. In these transistors, the application of negative gate pulses resulted in a notable increase in the post-synaptic current, while positive pulses led to a decrease. This distinctive response can be attributed to the dynamic interplay of charge interactions, significantly influenced by the ferroelectric characteristics of the OD-HfO<sub>2</sub> layer. The findings from this study highlight the capability of this particular TFT configuration in closely mirroring the intricate functionalities of biological neurons, paving the way for advancements in bio-inspired computing technologies. |
| first_indexed | 2024-03-07T22:27:49Z |
| format | Article |
| id | doaj.art-984d054b55874b12a11979fbcea8833c |
| institution | Directory Open Access Journal |
| issn | 2304-6740 |
| language | English |
| last_indexed | 2024-03-07T22:27:49Z |
| publishDate | 2024-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Inorganics |
| spelling | doaj.art-984d054b55874b12a11979fbcea8833c2024-02-23T15:21:22ZengMDPI AGInorganics2304-67402024-02-011226010.3390/inorganics12020060Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate DielectricsJie Lu0Zeyang Xiang1Kexiang Wang2Mengrui Shi3Liuxuan Wu4Fuyu Yan5Ranping Li6Zixuan Wang7Huilin Jin8Ran Jiang9Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaThe investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe<sub>2</sub> channel, coupled with an oxygen-deficient (OD)-HfO<sub>2</sub> layer structure. In these transistors, the application of negative gate pulses resulted in a notable increase in the post-synaptic current, while positive pulses led to a decrease. This distinctive response can be attributed to the dynamic interplay of charge interactions, significantly influenced by the ferroelectric characteristics of the OD-HfO<sub>2</sub> layer. The findings from this study highlight the capability of this particular TFT configuration in closely mirroring the intricate functionalities of biological neurons, paving the way for advancements in bio-inspired computing technologies.https://www.mdpi.com/2304-6740/12/2/60plasticityhafnium dioxidechannelinterlay |
| spellingShingle | Jie Lu Zeyang Xiang Kexiang Wang Mengrui Shi Liuxuan Wu Fuyu Yan Ranping Li Zixuan Wang Huilin Jin Ran Jiang Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics Inorganics plasticity hafnium dioxide channel interlay |
| title | Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics |
| title_full | Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics |
| title_fullStr | Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics |
| title_full_unstemmed | Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics |
| title_short | Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics |
| title_sort | bipolar plasticity in synaptic transistors utilizing hfse sub 2 sub channel with direct contact hfo sub 2 sub gate dielectrics |
| topic | plasticity hafnium dioxide channel interlay |
| url | https://www.mdpi.com/2304-6740/12/2/60 |
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