Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics

Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe<sub>2</sub> Channel with Direct-Contact HfO<sub>2</sub> Gate Dielectrics

The investigation of dual-mode synaptic plasticity was conducted in thin-film transistors (TFTs) featuring an HfSe<sub>2</sub> channel, coupled with an oxygen-deficient (OD)-HfO<sub>2</sub> layer structure. In these transistors, the application of negative gate pulses resulte...

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Bibliographic Details
Main Authors: Jie Lu, Zeyang Xiang, Kexiang Wang, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Inorganics
Subjects:
plasticity
hafnium dioxide
channel
interlay
Online Access:https://www.mdpi.com/2304-6740/12/2/60

Internet

https://www.mdpi.com/2304-6740/12/2/60

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