Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N

Abstract Wurtzite‐type Al1−xScxN solid solutions grown by metal organic chemical vapor deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV cm−1 at a measurement frequency of 1.5 kHz. The single crystal quali...

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Bibliographic Details
Main Authors: Niklas Wolff, Georg Schönweger, Isabel Streicher, Md Redwanul Islam, Nils Braun, Patrik Straňák, Lutz Kirste, Mario Prescher, Andriy Lotnyk, Hermann Kohlstedt, Stefano Leone, Lorenz Kienle, Simon Fichtner
Format: Article
Language:English
Published: Wiley-VCH 2024-05-01
Series:Advanced Physics Research
Subjects:
AlScN
III‐nitrides
nanostructure
STEM
wurtzite ferroelectrics
Online Access:https://doi.org/10.1002/apxr.202300113

Internet

https://doi.org/10.1002/apxr.202300113

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