Ultrahigh-performance integrated inverters based on amorphous zinc tin oxide deposited at room temperature
Recent advances in the field of integrated circuits based on sustainable and transparent amorphous oxide semiconductors (AOSs) are presented, demonstrating ultrahigh performance operating state-of-the-art integrated inverters comprising metal–semiconductor field-effect transistors (MESFETs) with amo...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0022975 |