High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures
A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solu...
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| Format: | Article |
| Language: | English |
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IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6678212/ |
| _version_ | 1819120609168195584 |
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| author | Kyeong-Jae Byeon Joong-Yeon Cho June O. Song Sang Youl Lee Heon Lee |
| author_facet | Kyeong-Jae Byeon Joong-Yeon Cho June O. Song Sang Youl Lee Heon Lee |
| author_sort | Kyeong-Jae Byeon |
| collection | DOAJ |
| description | A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solution and subsequent inductively coupled plasma etching. To confirm that the enhancement of light extraction by this structure, a conventional wet-chemical-etched structure was also fabricated on the n-GaN top layer of the VLED, yielding randomly oriented pyramid structures on the layer. Both VLEDs showed much stronger electroluminescence emission than an unpatterned VLED. However, the micrometer convex array improved the light extraction significantly more than the random pyramid structure owing to its greater ability to enlarge the light escape cone, attributed to its 50°-tapered profile and large extraction area. After chip packaging with silicone encapsulation, the light output power of the micropatterned VLED was 11.4% and 106% greater than those of the wet-etched and unpatterned VLEDs, respectively, under a 350-mA drive current. |
| first_indexed | 2024-12-22T06:23:23Z |
| format | Article |
| id | doaj.art-98c9139964594eeea876d970243ee07d |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-22T06:23:23Z |
| publishDate | 2013-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-98c9139964594eeea876d970243ee07d2022-12-21T18:35:54ZengIEEEIEEE Photonics Journal1943-06552013-01-01568200708820070810.1109/JPHOT.2013.22923146678212High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array StructuresKyeong-Jae Byeon0Joong-Yeon Cho1June O. Song2Sang Youl Lee3Heon Lee4<formula formulatype="inline"><tex Notation="TeX">$^{1}$</tex></formula> Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, MI, USA<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> Department of Materials Science and Engineering, Korea University, Seoul, Korea<formula formulatype="inline"><tex Notation="TeX">$^{3}$</tex></formula> Department of LED Business, Chip Development Group, LGIT, Paju, KoreaDepartment of LED Business, Chip Development Group, LGIT, Paju, KoreaDepartment of Materials Science and Engineering, Korea University , Seoul, KoreaA high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solution and subsequent inductively coupled plasma etching. To confirm that the enhancement of light extraction by this structure, a conventional wet-chemical-etched structure was also fabricated on the n-GaN top layer of the VLED, yielding randomly oriented pyramid structures on the layer. Both VLEDs showed much stronger electroluminescence emission than an unpatterned VLED. However, the micrometer convex array improved the light extraction significantly more than the random pyramid structure owing to its greater ability to enlarge the light escape cone, attributed to its 50°-tapered profile and large extraction area. After chip packaging with silicone encapsulation, the light output power of the micropatterned VLED was 11.4% and 106% greater than those of the wet-etched and unpatterned VLEDs, respectively, under a 350-mA drive current.https://ieeexplore.ieee.org/document/6678212/Light-emitting diodes (LEDs)microstructure fabrication |
| spellingShingle | Kyeong-Jae Byeon Joong-Yeon Cho June O. Song Sang Youl Lee Heon Lee High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures IEEE Photonics Journal Light-emitting diodes (LEDs) microstructure fabrication |
| title | High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures |
| title_full | High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures |
| title_fullStr | High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures |
| title_full_unstemmed | High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures |
| title_short | High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures |
| title_sort | high brightness vertical gan based light emitting diodes with hexagonally close packed micrometer array structures |
| topic | Light-emitting diodes (LEDs) microstructure fabrication |
| url | https://ieeexplore.ieee.org/document/6678212/ |
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