Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patternin...

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Bibliographic Details
Main Authors:	Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5012559

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