Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity
Abstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a cruc...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-04-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202201031 |
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| author | Ming‐Hui Chiu Xiang Ji Tianyi Zhang Nannan Mao Yue Luo Chuqiao Shi Xudong Zheng Hongwei Liu Yimo Han William L. Wilson Zhengtang Luo Vincent Tung Jing Kong |
| author_facet | Ming‐Hui Chiu Xiang Ji Tianyi Zhang Nannan Mao Yue Luo Chuqiao Shi Xudong Zheng Hongwei Liu Yimo Han William L. Wilson Zhengtang Luo Vincent Tung Jing Kong |
| author_sort | Ming‐Hui Chiu |
| collection | DOAJ |
| description | Abstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large‐area, ultrathin, and high‐quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD‐synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high‐quality 2D SnSe crystals are synthesized via low‐pressure PVD, which display in‐plane ferroelectric domains observed by piezoresponse force microscopy and polarization‐dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre‐annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large‐area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness. |
| first_indexed | 2024-03-12T21:53:19Z |
| format | Article |
| id | doaj.art-99070b9304e44dffbd52d99c7e6054e3 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:53:19Z |
| publishDate | 2023-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-99070b9304e44dffbd52d99c7e6054e32023-07-26T01:35:24ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-04-0194n/an/a10.1002/aelm.202201031Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane FerroelectricityMing‐Hui Chiu0Xiang Ji1Tianyi Zhang2Nannan Mao3Yue Luo4Chuqiao Shi5Xudong Zheng6Hongwei Liu7Yimo Han8William L. Wilson9Zhengtang Luo10Vincent Tung11Jing Kong12Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USACenter for Nanoscale Systems Harvard University Cambridge MA 02138 USADepartment of Materials Science and NanoEngineering Rice University Houston TX 77005 USADepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Materials Science and NanoEngineering Rice University Houston TX 77005 USACenter for Nanoscale Systems Harvard University Cambridge MA 02138 USADepartment of Chemical and Biological Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 P. R. ChinaPhysical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi ArabiaDepartment of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USAAbstract Tin (II) selenide (SnSe) is an emerging 2D material with many intriguing properties, such as record‐high thermoelectric figure of merit (ZT), purely in‐plane ferroelectricity, and excellent nonlinear optical properties. To explore these functional properties and related applications, a crucial step is to develop controllable routes to synthesize large‐area, ultrathin, and high‐quality SnSe crystals. Physical vapor deposition (PVD) constitutes a reliable method to synthesize 2D SnSe, however, effects of various growth parameters have not yet been systematically investigated, and current PVD‐synthesized flakes are often thick (>10 nm) with small lateral sizes (<10 µm). In this work, high‐quality 2D SnSe crystals are synthesized via low‐pressure PVD, which display in‐plane ferroelectric domains observed by piezoresponse force microscopy and polarization‐dependent reflection spectroscopy. Detailed studies regarding the roles of various parameters are further carried out, including substrate pre‐annealing, growth duration, temperature, and pressure, which enable to rationally optimize the growth and obtain 2D SnSe crystals with lateral sizes up to ≈23.0 µm and thicknesses down to ≈2.0 nm (3–4 layers). This work paves the way for the controlled growth of large‐area 2D SnSe, facilitating the future exploration of many interesting multiferroic properties and applications with atomic thickness.https://doi.org/10.1002/aelm.2022010312D materialscontrolled growthgroup‐IV monochalcogenidesin‐plane ferroelectricityphysical vapor depositionsubstrate engineering |
| spellingShingle | Ming‐Hui Chiu Xiang Ji Tianyi Zhang Nannan Mao Yue Luo Chuqiao Shi Xudong Zheng Hongwei Liu Yimo Han William L. Wilson Zhengtang Luo Vincent Tung Jing Kong Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity Advanced Electronic Materials 2D materials controlled growth group‐IV monochalcogenides in‐plane ferroelectricity physical vapor deposition substrate engineering |
| title | Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity |
| title_full | Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity |
| title_fullStr | Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity |
| title_full_unstemmed | Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity |
| title_short | Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane Ferroelectricity |
| title_sort | growth of large sized 2d ultrathin snse crystals with in plane ferroelectricity |
| topic | 2D materials controlled growth group‐IV monochalcogenides in‐plane ferroelectricity physical vapor deposition substrate engineering |
| url | https://doi.org/10.1002/aelm.202201031 |
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