Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications
In the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component metals like indium to provide sufficient charge car...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5053683 |
| _version_ | 1818554116542038016 |
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| author | Matthew J. Wahila Zachary W. Lebens-Higgins Keith T. Butler Daniel Fritsch Robert E. Treharne Robert G. Palgrave Joseph C. Woicik Benjamin J. Morgan Aron Walsh Louis F. J. Piper |
| author_facet | Matthew J. Wahila Zachary W. Lebens-Higgins Keith T. Butler Daniel Fritsch Robert E. Treharne Robert G. Palgrave Joseph C. Woicik Benjamin J. Morgan Aron Walsh Louis F. J. Piper |
| author_sort | Matthew J. Wahila |
| collection | DOAJ |
| description | In the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component metals like indium to provide sufficient charge carrier conduction, and their optoelectronic properties are not as predictable and well-described as those of traditional, crystalline semiconductors. Herein we report on our comprehensive study of the amorphous zinc-tin-oxide (a-ZTO) system for use as an indium-free, n-type TAOS. Using a combination of high-throughput co-deposition growth, high resolution spectral mapping, and atomistic calculations, we explain the development of disorder-related subgap states in SnO2-like a-ZTO and optical bandgap reduction in ZnO-like a-ZTO. In addition, we report on a composition-induced electronic and structural transition in ZnO-like a-ZTO resulting in an exceptionally high figure of merit, comparable to that of amorphous indium-gallium-zinc-oxide. Our results accelerate the development of a-ZTO and similar systems as indium-free TAOS materials. |
| first_indexed | 2024-12-12T09:35:07Z |
| format | Article |
| id | doaj.art-990cded0ca18440aafd78b86df687258 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T09:35:07Z |
| publishDate | 2019-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-990cded0ca18440aafd78b86df6872582022-12-22T00:28:44ZengAIP Publishing LLCAPL Materials2166-532X2019-02-0172022509022509-910.1063/1.5053683020992APMAccelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applicationsMatthew J. Wahila0Zachary W. Lebens-Higgins1Keith T. Butler2Daniel Fritsch3Robert E. Treharne4Robert G. Palgrave5Joseph C. Woicik6Benjamin J. Morgan7Aron Walsh8Louis F. J. Piper9Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, United KingdomDepartment Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, GermanyStephenson Institute for Renewable Energy, University of Liverpool, Liverpool L69 7ZF, United KingdomUniversity College London, Department of Chemistry, 20 Gordon Street, London WC1H 0AJ, United KingdomMaterials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USADepartment of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, United KingdomDepartment of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United KingdomMaterials Science and Engineering, Binghamton University, Binghamton, New York 13902, USAIn the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component metals like indium to provide sufficient charge carrier conduction, and their optoelectronic properties are not as predictable and well-described as those of traditional, crystalline semiconductors. Herein we report on our comprehensive study of the amorphous zinc-tin-oxide (a-ZTO) system for use as an indium-free, n-type TAOS. Using a combination of high-throughput co-deposition growth, high resolution spectral mapping, and atomistic calculations, we explain the development of disorder-related subgap states in SnO2-like a-ZTO and optical bandgap reduction in ZnO-like a-ZTO. In addition, we report on a composition-induced electronic and structural transition in ZnO-like a-ZTO resulting in an exceptionally high figure of merit, comparable to that of amorphous indium-gallium-zinc-oxide. Our results accelerate the development of a-ZTO and similar systems as indium-free TAOS materials.http://dx.doi.org/10.1063/1.5053683 |
| spellingShingle | Matthew J. Wahila Zachary W. Lebens-Higgins Keith T. Butler Daniel Fritsch Robert E. Treharne Robert G. Palgrave Joseph C. Woicik Benjamin J. Morgan Aron Walsh Louis F. J. Piper Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications APL Materials |
| title | Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications |
| title_full | Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications |
| title_fullStr | Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications |
| title_full_unstemmed | Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications |
| title_short | Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications |
| title_sort | accelerated optimization of transparent amorphous zinc tin oxide thin films for optoelectronic applications |
| url | http://dx.doi.org/10.1063/1.5053683 |
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