The electronic structure of ε-Ga2O3
The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absen...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054395 |
| _version_ | 1818320143153889280 |
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| author | M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari |
| author_facet | M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari |
| author_sort | M. Mulazzi |
| collection | DOAJ |
| description | The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states. |
| first_indexed | 2024-12-13T10:20:19Z |
| format | Article |
| id | doaj.art-99193bbad9164c628109f39395984729 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T10:20:19Z |
| publishDate | 2019-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-99193bbad9164c628109f393959847292022-12-21T23:51:13ZengAIP Publishing LLCAPL Materials2166-532X2019-02-0172022522022522-610.1063/1.5054395026992APMThe electronic structure of ε-Ga2O3M. Mulazzi0F. Reichmann1A. Becker2W. M. Klesse3P. Alippi4V. Fiorentini5A. Parisini6M. Bosi7R. Fornari8Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyCNR-ISM, Via Salaria km 29,300, I-00015 Monterotondo Stazione (Rome), ItalyDepartment of Physics, Cagliari University, I-09042 Monserrato (CA), ItalyDepartment of Mathematical, Physical and Computer Sciences, Parma University, Viale delle Scienze 7/A, I-43124 Parma, ItalyCNR, Institute of Electronic and Magnetic Materials, Viale delle Scienze 37/A, I-43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, Parma University, Viale delle Scienze 7/A, I-43124 Parma, ItalyThe electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.http://dx.doi.org/10.1063/1.5054395 |
| spellingShingle | M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari The electronic structure of ε-Ga2O3 APL Materials |
| title | The electronic structure of ε-Ga2O3 |
| title_full | The electronic structure of ε-Ga2O3 |
| title_fullStr | The electronic structure of ε-Ga2O3 |
| title_full_unstemmed | The electronic structure of ε-Ga2O3 |
| title_short | The electronic structure of ε-Ga2O3 |
| title_sort | electronic structure of ε ga2o3 |
| url | http://dx.doi.org/10.1063/1.5054395 |
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