Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer
Abstract The recent emergence of non‐fullerene acceptors (NFAs) has energized the field of organic photodiodes (OPDs) and made major breakthroughs in their critical photoelectric characteristics. Yet, stabilizing inverted NF‐OPDs remains challenging because of the intrinsic degradation induced by im...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-10-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202302976 |
| _version_ | 1797663888550920192 |
|---|---|
| author | Jianhua Xiao Yang Wang Liu Yuan Yin Long Zhi Jiang Qingxia Liu Deen Gu Weizhi Li Huiling Tai Yadong Jiang |
| author_facet | Jianhua Xiao Yang Wang Liu Yuan Yin Long Zhi Jiang Qingxia Liu Deen Gu Weizhi Li Huiling Tai Yadong Jiang |
| author_sort | Jianhua Xiao |
| collection | DOAJ |
| description | Abstract The recent emergence of non‐fullerene acceptors (NFAs) has energized the field of organic photodiodes (OPDs) and made major breakthroughs in their critical photoelectric characteristics. Yet, stabilizing inverted NF‐OPDs remains challenging because of the intrinsic degradation induced by improper interfaces. Herein, a tin ion‐chelated polyethyleneimine ethoxylated (denoted as PEIE‐Sn) is proposed as a generic cathode interfacial layer (CIL) of NF‐OPDs. The chelation between tin ions and nitrogen/oxygen atoms in PEIE‐Sn contributes to the interface compatibility with efficient NFAs. The PEIE‐Sn can effectively endow the devices with optimized cascade alignment and reduced interface defects. Consequently, the PEIE‐Sn‐OPD exhibits properties of anti‐environmental interference, suppressed dark current, and accelerated interfacial electron extraction and transmission. As a result, the unencapsulated PEIE‐Sn‐OPD delivers high specific detection and fast response speed and shows only slight attenuation in photoelectric performance after exposure to air, light, and heat. Its superior performance outperforms the incumbent typical counterparts (ZnO, SnO2, and PEIE as the CILs) from metrics of both stability and photoelectric characteristics. This finding suggests a promising strategy for stabilizing NF‐OPDs by designing appropriate interface layers. |
| first_indexed | 2024-03-11T19:22:15Z |
| format | Article |
| id | doaj.art-9953f71f30c6456d98e5ece68392bbc3 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-11T19:22:15Z |
| publishDate | 2023-10-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-9953f71f30c6456d98e5ece68392bbc32023-10-07T03:51:49ZengWileyAdvanced Science2198-38442023-10-011028n/an/a10.1002/advs.202302976Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated PolymerJianhua Xiao0Yang Wang1Liu Yuan2Yin Long3Zhi Jiang4Qingxia Liu5Deen Gu6Weizhi Li7Huiling Tai8Yadong Jiang9State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaInnovative Center for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 SingaporeState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 ChinaAbstract The recent emergence of non‐fullerene acceptors (NFAs) has energized the field of organic photodiodes (OPDs) and made major breakthroughs in their critical photoelectric characteristics. Yet, stabilizing inverted NF‐OPDs remains challenging because of the intrinsic degradation induced by improper interfaces. Herein, a tin ion‐chelated polyethyleneimine ethoxylated (denoted as PEIE‐Sn) is proposed as a generic cathode interfacial layer (CIL) of NF‐OPDs. The chelation between tin ions and nitrogen/oxygen atoms in PEIE‐Sn contributes to the interface compatibility with efficient NFAs. The PEIE‐Sn can effectively endow the devices with optimized cascade alignment and reduced interface defects. Consequently, the PEIE‐Sn‐OPD exhibits properties of anti‐environmental interference, suppressed dark current, and accelerated interfacial electron extraction and transmission. As a result, the unencapsulated PEIE‐Sn‐OPD delivers high specific detection and fast response speed and shows only slight attenuation in photoelectric performance after exposure to air, light, and heat. Its superior performance outperforms the incumbent typical counterparts (ZnO, SnO2, and PEIE as the CILs) from metrics of both stability and photoelectric characteristics. This finding suggests a promising strategy for stabilizing NF‐OPDs by designing appropriate interface layers.https://doi.org/10.1002/advs.202302976cathode interfacial layersinterface engineeringnon‐fullerene acceptorsorganic photodiodesstability |
| spellingShingle | Jianhua Xiao Yang Wang Liu Yuan Yin Long Zhi Jiang Qingxia Liu Deen Gu Weizhi Li Huiling Tai Yadong Jiang Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer Advanced Science cathode interfacial layers interface engineering non‐fullerene acceptors organic photodiodes stability |
| title | Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer |
| title_full | Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer |
| title_fullStr | Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer |
| title_full_unstemmed | Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer |
| title_short | Stabilizing Non‐Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion‐Chelated Polymer |
| title_sort | stabilizing non fullerene organic photodiodes through interface engineering enabled by a tin ion chelated polymer |
| topic | cathode interfacial layers interface engineering non‐fullerene acceptors organic photodiodes stability |
| url | https://doi.org/10.1002/advs.202302976 |
| work_keys_str_mv | AT jianhuaxiao stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT yangwang stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT liuyuan stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT yinlong stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT zhijiang stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT qingxialiu stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT deengu stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT weizhili stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT huilingtai stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer AT yadongjiang stabilizingnonfullereneorganicphotodiodesthroughinterfaceengineeringenabledbyatinionchelatedpolymer |