Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process
This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlO<i><sub>x</sub></i>-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlO<i><sub>x</sub></i>...
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MDPI AG
2021-05-01
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| Online Access: | https://www.mdpi.com/2075-4701/11/5/772 |
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| author | Seunghyun Kim Osung Kwon Hojeong Ryu Sungjun Kim |
| author_facet | Seunghyun Kim Osung Kwon Hojeong Ryu Sungjun Kim |
| author_sort | Seunghyun Kim |
| collection | DOAJ |
| description | This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlO<i><sub>x</sub></i>-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlO<i><sub>x</sub></i> film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlO<i><sub>x</sub></i>/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation. |
| first_indexed | 2024-03-10T11:36:43Z |
| format | Article |
| id | doaj.art-997c25ae15384333a1dfe349ee0c3b55 |
| institution | Directory Open Access Journal |
| issn | 2075-4701 |
| language | English |
| last_indexed | 2024-03-10T11:36:43Z |
| publishDate | 2021-05-01 |
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| record_format | Article |
| series | Metals |
| spelling | doaj.art-997c25ae15384333a1dfe349ee0c3b552023-11-21T18:48:13ZengMDPI AGMetals2075-47012021-05-0111577210.3390/met11050772Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset ProcessSeunghyun Kim0Osung Kwon1Hojeong Ryu2Sungjun Kim3Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaThis work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlO<i><sub>x</sub></i>-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlO<i><sub>x</sub></i> film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlO<i><sub>x</sub></i>/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.https://www.mdpi.com/2075-4701/11/5/772neuromorphic systemsynaptic deviceresistive switchingmetal oxidesbilayerneuromorphic simulation |
| spellingShingle | Seunghyun Kim Osung Kwon Hojeong Ryu Sungjun Kim Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process Metals neuromorphic system synaptic device resistive switching metal oxides bilayer neuromorphic simulation |
| title | Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process |
| title_full | Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process |
| title_fullStr | Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process |
| title_full_unstemmed | Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process |
| title_short | Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process |
| title_sort | improved synaptic device properties of hfalo i sub x sub i dielectric on highly doped silicon substrate by partial reset process |
| topic | neuromorphic system synaptic device resistive switching metal oxides bilayer neuromorphic simulation |
| url | https://www.mdpi.com/2075-4701/11/5/772 |
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