Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Improved Synaptic Device Properties of HfAlO<i><sub>x</sub></i> Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlO<i><sub>x</sub></i>-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlO<i><sub>x</sub></i>...

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Bibliographic Details
Main Authors: Seunghyun Kim, Osung Kwon, Hojeong Ryu, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Metals
Subjects:
neuromorphic system
synaptic device
resistive switching
metal oxides
bilayer
neuromorphic simulation
Online Access:https://www.mdpi.com/2075-4701/11/5/772

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