Generating T centres in photonic silicon-on-insulator material by ion implantation

Generating T centres in photonic silicon-on-insulator material by ion implantation

Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O -band optical transition near 1326 nm and long-lived el...

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Bibliographic Details
Main Authors: E R MacQuarrie, C Chartrand, D B Higginbottom, K J Morse, V A Karasyuk, S Roorda, S Simmons
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:New Journal of Physics
Subjects:
colour centres
spin-photon interfaces
silicon photonics
silicon spin qubits
Online Access:https://doi.org/10.1088/1367-2630/ac291f

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