Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation
Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitax...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2015-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/17/5/053023 |
| _version_ | 1827873979165048832 |
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| author | L Jiao H J Liu J L Chen Y Yi W G Chen Y Cai J N Wang X Q Dai N Wang W K Ho M H Xie |
| author_facet | L Jiao H J Liu J L Chen Y Yi W G Chen Y Cai J N Wang X Q Dai N Wang W K Ho M H Xie |
| author_sort | L Jiao |
| collection | DOAJ |
| description | Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe _2 , an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered. |
| first_indexed | 2024-03-12T16:44:42Z |
| format | Article |
| id | doaj.art-99bc5fb454b5488094e31af15ed91c17 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:44:42Z |
| publishDate | 2015-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-99bc5fb454b5488094e31af15ed91c172023-08-08T14:18:04ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117505302310.1088/1367-2630/17/5/053023Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formationL Jiao0H J Liu1J L Chen2Y Yi3W G Chen4Y Cai5J N Wang6X Q Dai7N Wang8W K Ho9M H Xie10Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, People’s Republic of ChinaPhysics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, People’s Republic of ChinaPhysics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, People’s Republic of ChinaPhysics Department, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong, People’s Republic of ChinaDepartment of Physics, Zhengzhou Normal University , Zhengzhou, Henan 450044, People’s Republic of ChinaPhysics Department, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong, People’s Republic of ChinaPhysics Department, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong, People’s Republic of ChinaDepartment of Physics, Zhengzhou Normal University , Zhengzhou, Henan 450044, People’s Republic of China; College of Physics and Electronic Engineering, Henan Normal University , Xinxiang 453007, People’s Republic of ChinaPhysics Department, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong, People’s Republic of ChinaPhysics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, People’s Republic of ChinaPhysics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, People’s Republic of ChinaMonolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe _2 , an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.https://doi.org/10.1088/1367-2630/17/5/053023transition metal dichalcogenidesMoSe2molecular beam epitaxyvan der waals epitaxysurface nucleationdomain boundary |
| spellingShingle | L Jiao H J Liu J L Chen Y Yi W G Chen Y Cai J N Wang X Q Dai N Wang W K Ho M H Xie Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation New Journal of Physics transition metal dichalcogenides MoSe2 molecular beam epitaxy van der waals epitaxy surface nucleation domain boundary |
| title | Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation |
| title_full | Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation |
| title_fullStr | Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation |
| title_full_unstemmed | Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation |
| title_short | Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation |
| title_sort | molecular beam epitaxy of monolayer mose2 growth characteristics and domain boundary formation |
| topic | transition metal dichalcogenides MoSe2 molecular beam epitaxy van der waals epitaxy surface nucleation domain boundary |
| url | https://doi.org/10.1088/1367-2630/17/5/053023 |
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