Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitax...

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Hlavní autoři: L Jiao, H J Liu, J L Chen, Y Yi, W G Chen, Y Cai, J N Wang, X Q Dai, N Wang, W K Ho, M H Xie
Médium: Článek
Jazyk:English
Vydáno: IOP Publishing 2015-01-01
Edice:New Journal of Physics
Témata:
transition metal dichalcogenides
MoSe2
molecular beam epitaxy
van der waals epitaxy
surface nucleation
domain boundary
On-line přístup:https://doi.org/10.1088/1367-2630/17/5/053023

Internet

https://doi.org/10.1088/1367-2630/17/5/053023

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