Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications
Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various at...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/4/832 |
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| author | Hocheon Yoo Keun Heo Md. Hasan Raza Ansari Seongjae Cho |
| author_facet | Hocheon Yoo Keun Heo Md. Hasan Raza Ansari Seongjae Cho |
| author_sort | Hocheon Yoo |
| collection | DOAJ |
| description | Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials. |
| first_indexed | 2024-03-10T12:57:15Z |
| format | Article |
| id | doaj.art-99d401805ded4957bba1c3f6474e582b |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T12:57:15Z |
| publishDate | 2021-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-99d401805ded4957bba1c3f6474e582b2023-11-21T11:50:57ZengMDPI AGNanomaterials2079-49912021-03-0111483210.3390/nano11040832Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and ApplicationsHocheon Yoo0Keun Heo1Md. Hasan Raza Ansari2Seongjae Cho3Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, KoreaDepartment of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, KoreaDepartment of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, KoreaDepartment of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, KoreaTwo-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.https://www.mdpi.com/2079-4991/11/4/832electrical doping2D semiconductor materialtransition metal dichalcogenidegrapheneatomically thin film |
| spellingShingle | Hocheon Yoo Keun Heo Md. Hasan Raza Ansari Seongjae Cho Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Nanomaterials electrical doping 2D semiconductor material transition metal dichalcogenide graphene atomically thin film |
| title | Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
| title_full | Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
| title_fullStr | Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
| title_full_unstemmed | Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
| title_short | Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
| title_sort | recent advances in electrical doping of 2d semiconductor materials methods analyses and applications |
| topic | electrical doping 2D semiconductor material transition metal dichalcogenide graphene atomically thin film |
| url | https://www.mdpi.com/2079-4991/11/4/832 |
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