T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)
In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical chan...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-01-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/1/64 |
| _version_ | 1818173932525584384 |
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| author | Zeqi Chen Jianping Hu Hao Ye Zhufei Chu |
| author_facet | Zeqi Chen Jianping Hu Hao Ye Zhufei Chu |
| author_sort | Zeqi Chen |
| collection | DOAJ |
| description | In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channel. The T-shaped channel structure increases the coupling area between the top gate and the front and back gates, which improves the ability of the gate electrodes to control the channel. What’s more, it makes the top gate have almost the same control ability for the channel as the front gate and the back gate. This unique structure design brings a unique function in that the device is turned on only when two or three inputs are activated. Silvaco technology computer-aided design (TCAD) simulations are used to verify the current characteristics of the proposed Ti-TcFET. The current characteristics of the device are theoretically analyzed, and the results show that the theoretical analysis agrees with the TCAD simulation results. The proposed Ti-TcFET devices with three input terminals can be used to simplify the complex circuits in a compact style with reduced counts of transistors compared with the traditional complementary metal−oxide−semiconductor/ fin field-effect transistors (CMOS/FinFETs) with a single input terminal and thus provides a new idea for future circuit designs. |
| first_indexed | 2024-12-11T19:36:22Z |
| format | Article |
| id | doaj.art-9a1c3aa72db64947b82be136c97c6468 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-11T19:36:22Z |
| publishDate | 2020-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-9a1c3aa72db64947b82be136c97c64682022-12-22T00:53:09ZengMDPI AGMicromachines2072-666X2020-01-011116410.3390/mi11010064mi11010064T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)Zeqi Chen0Jianping Hu1Hao Ye2Zhufei Chu3Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaFaculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaFaculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaFaculty of Information Science and Technology, Ningbo University, Ningbo 315211, ChinaIn this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channel. The T-shaped channel structure increases the coupling area between the top gate and the front and back gates, which improves the ability of the gate electrodes to control the channel. What’s more, it makes the top gate have almost the same control ability for the channel as the front gate and the back gate. This unique structure design brings a unique function in that the device is turned on only when two or three inputs are activated. Silvaco technology computer-aided design (TCAD) simulations are used to verify the current characteristics of the proposed Ti-TcFET. The current characteristics of the device are theoretically analyzed, and the results show that the theoretical analysis agrees with the TCAD simulation results. The proposed Ti-TcFET devices with three input terminals can be used to simplify the complex circuits in a compact style with reduced counts of transistors compared with the traditional complementary metal−oxide−semiconductor/ fin field-effect transistors (CMOS/FinFETs) with a single input terminal and thus provides a new idea for future circuit designs.https://www.mdpi.com/2072-666X/11/1/64new devicethree-input transistort-channelcompact circuit style |
| spellingShingle | Zeqi Chen Jianping Hu Hao Ye Zhufei Chu T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) Micromachines new device three-input transistor t-channel compact circuit style |
| title | T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) |
| title_full | T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) |
| title_fullStr | T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) |
| title_full_unstemmed | T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) |
| title_short | T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET) |
| title_sort | t channel field effect transistor with three input terminals ti tcfet |
| topic | new device three-input transistor t-channel compact circuit style |
| url | https://www.mdpi.com/2072-666X/11/1/64 |
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