Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and swit...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/8/1222 |
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| author | Osama Ahmed Yousuf Khan Muhammad A. Butt Nikolay L. Kazanskiy Svetlana N. Khonina |
| author_facet | Osama Ahmed Yousuf Khan Muhammad A. Butt Nikolay L. Kazanskiy Svetlana N. Khonina |
| author_sort | Osama Ahmed |
| collection | DOAJ |
| description | Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and switching efficiency of GaN-based FET in an active-clamp, DC-to-DC flyback converter for step-down application (24 V to 7 V) and compares it with silicon (Si)- based devices in the same circuit topology. The operation is analyzed under various input conditions and output loads such as R, RC, RL, and RLC. The proposed topology can achieve a maximum power-conversion efficiency of 99.6% and can operate at higher frequency values above 1 MHz. The presented GaN-based flyback model can replace conventional Si-based switches in power applications which require high power-efficiency and switching speed in a compact device. |
| first_indexed | 2024-03-09T10:38:49Z |
| format | Article |
| id | doaj.art-9a2320ab9ccc48afb3aca08f2ee88954 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T10:38:49Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-9a2320ab9ccc48afb3aca08f2ee889542023-12-01T20:47:05ZengMDPI AGElectronics2079-92922022-04-01118122210.3390/electronics11081222Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback ConverterOsama Ahmed0Yousuf Khan1Muhammad A. Butt2Nikolay L. Kazanskiy3Svetlana N. Khonina4Department of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Airport Road, Quetta 87300, PakistanDepartment of Electronic Engineering, Balochistan University of Information Technology, Engineering and Management Sciences, Airport Road, Quetta 87300, PakistanInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, PolandImage Processing Systems Institute, Samara National Research University, 443086 Samara, RussiaImage Processing Systems Institute, Samara National Research University, 443086 Samara, RussiaGallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such as lower input/output capacitances, a higher switching speed, and a compact size, resulting in higher-density power outputs and reduced switching losses. This research investigates the power and switching efficiency of GaN-based FET in an active-clamp, DC-to-DC flyback converter for step-down application (24 V to 7 V) and compares it with silicon (Si)- based devices in the same circuit topology. The operation is analyzed under various input conditions and output loads such as R, RC, RL, and RLC. The proposed topology can achieve a maximum power-conversion efficiency of 99.6% and can operate at higher frequency values above 1 MHz. The presented GaN-based flyback model can replace conventional Si-based switches in power applications which require high power-efficiency and switching speed in a compact device.https://www.mdpi.com/2079-9292/11/8/1222converter topologyflyback converterGaN deviceshigh-frequency devicespower densitypower efficiency |
| spellingShingle | Osama Ahmed Yousuf Khan Muhammad A. Butt Nikolay L. Kazanskiy Svetlana N. Khonina Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter Electronics converter topology flyback converter GaN devices high-frequency devices power density power efficiency |
| title | Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter |
| title_full | Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter |
| title_fullStr | Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter |
| title_full_unstemmed | Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter |
| title_short | Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter |
| title_sort | performance comparison of silicon and gallium nitride based mosfets for a power efficient dc to dc flyback converter |
| topic | converter topology flyback converter GaN devices high-frequency devices power density power efficiency |
| url | https://www.mdpi.com/2079-9292/11/8/1222 |
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