Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method
We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly dep...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-10-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/21/7262 |
| _version_ | 1797511794717097984 |
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| author | Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang |
| author_facet | Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang |
| author_sort | Yamujin Jang |
| collection | DOAJ |
| description | We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method. |
| first_indexed | 2024-03-10T05:52:08Z |
| format | Article |
| id | doaj.art-9a26b7fbeecb49fc8444a6a06de6dd43 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T05:52:08Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-9a26b7fbeecb49fc8444a6a06de6dd432023-11-22T21:39:01ZengMDPI AGSensors1424-82202021-10-012121726210.3390/s21217262Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer MethodYamujin Jang0Young-Min Seo1Hyeon-Sik Jang2Keun Heo3Dongmok Whang4School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonju 55324, KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonju 55324, KoreaSchool of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaWe report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.https://www.mdpi.com/1424-8220/21/21/7262graphenefield-effect transistorgraphene transferelectrical property |
| spellingShingle | Yamujin Jang Young-Min Seo Hyeon-Sik Jang Keun Heo Dongmok Whang Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method Sensors graphene field-effect transistor graphene transfer electrical property |
| title | Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method |
| title_full | Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method |
| title_fullStr | Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method |
| title_full_unstemmed | Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method |
| title_short | Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method |
| title_sort | performance improvement of residue free graphene field effect transistor using au assisted transfer method |
| topic | graphene field-effect transistor graphene transfer electrical property |
| url | https://www.mdpi.com/1424-8220/21/21/7262 |
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