Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly dep...

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Bibliographic Details
Main Authors: Yamujin Jang, Young-Min Seo, Hyeon-Sik Jang, Keun Heo, Dongmok Whang
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Sensors
Subjects:
graphene
field-effect transistor
graphene transfer
electrical property
Online Access:https://www.mdpi.com/1424-8220/21/21/7262

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