Ion Beam Nanostructuring of HgCdTe Ternary Compound
Abstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectro...
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SpringerOpen
2017-05-01
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Online Access: | http://link.springer.com/article/10.1186/s11671-017-2093-x |
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author | Aleksey B. Smirnov Rada K. Savkina Ruslana S. Udovytska Oleksandr I. Gudymenko Vasyl P. Kladko Andrii A. Korchovyi |
author_facet | Aleksey B. Smirnov Rada K. Savkina Ruslana S. Udovytska Oleksandr I. Gudymenko Vasyl P. Kladko Andrii A. Korchovyi |
author_sort | Aleksey B. Smirnov |
collection | DOAJ |
description | Abstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − x Cd x Te cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification. |
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issn | 1931-7573 1556-276X |
language | English |
last_indexed | 2024-03-12T07:21:26Z |
publishDate | 2017-05-01 |
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series | Nanoscale Research Letters |
spelling | doaj.art-9a58850fbab14b968ccdc5d82b2866202023-09-02T22:25:18ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-05-011211910.1186/s11671-017-2093-xIon Beam Nanostructuring of HgCdTe Ternary CompoundAleksey B. Smirnov0Rada K. Savkina1Ruslana S. Udovytska2Oleksandr I. Gudymenko3Vasyl P. Kladko4Andrii A. Korchovyi5V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineAbstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − x Cd x Te cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.http://link.springer.com/article/10.1186/s11671-017-2093-xHgCdTeIR and sub-THz detectorIon implantation |
spellingShingle | Aleksey B. Smirnov Rada K. Savkina Ruslana S. Udovytska Oleksandr I. Gudymenko Vasyl P. Kladko Andrii A. Korchovyi Ion Beam Nanostructuring of HgCdTe Ternary Compound Nanoscale Research Letters HgCdTe IR and sub-THz detector Ion implantation |
title | Ion Beam Nanostructuring of HgCdTe Ternary Compound |
title_full | Ion Beam Nanostructuring of HgCdTe Ternary Compound |
title_fullStr | Ion Beam Nanostructuring of HgCdTe Ternary Compound |
title_full_unstemmed | Ion Beam Nanostructuring of HgCdTe Ternary Compound |
title_short | Ion Beam Nanostructuring of HgCdTe Ternary Compound |
title_sort | ion beam nanostructuring of hgcdte ternary compound |
topic | HgCdTe IR and sub-THz detector Ion implantation |
url | http://link.springer.com/article/10.1186/s11671-017-2093-x |
work_keys_str_mv | AT alekseybsmirnov ionbeamnanostructuringofhgcdteternarycompound AT radaksavkina ionbeamnanostructuringofhgcdteternarycompound AT ruslanasudovytska ionbeamnanostructuringofhgcdteternarycompound AT oleksandrigudymenko ionbeamnanostructuringofhgcdteternarycompound AT vasylpkladko ionbeamnanostructuringofhgcdteternarycompound AT andriiakorchovyi ionbeamnanostructuringofhgcdteternarycompound |