Ion Beam Nanostructuring of HgCdTe Ternary Compound

Abstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectro...

Full description

Bibliographic Details
Main Authors: Aleksey B. Smirnov, Rada K. Savkina, Ruslana S. Udovytska, Oleksandr I. Gudymenko, Vasyl P. Kladko, Andrii A. Korchovyi
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://link.springer.com/article/10.1186/s11671-017-2093-x
_version_ 1827839457455243264
author Aleksey B. Smirnov
Rada K. Savkina
Ruslana S. Udovytska
Oleksandr I. Gudymenko
Vasyl P. Kladko
Andrii A. Korchovyi
author_facet Aleksey B. Smirnov
Rada K. Savkina
Ruslana S. Udovytska
Oleksandr I. Gudymenko
Vasyl P. Kladko
Andrii A. Korchovyi
author_sort Aleksey B. Smirnov
collection DOAJ
description Abstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − x Cd x Te cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.
first_indexed 2024-03-12T07:21:26Z
format Article
id doaj.art-9a58850fbab14b968ccdc5d82b286620
institution Directory Open Access Journal
issn 1931-7573
1556-276X
language English
last_indexed 2024-03-12T07:21:26Z
publishDate 2017-05-01
publisher SpringerOpen
record_format Article
series Nanoscale Research Letters
spelling doaj.art-9a58850fbab14b968ccdc5d82b2866202023-09-02T22:25:18ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-05-011211910.1186/s11671-017-2093-xIon Beam Nanostructuring of HgCdTe Ternary CompoundAleksey B. Smirnov0Rada K. Savkina1Ruslana S. Udovytska2Oleksandr I. Gudymenko3Vasyl P. Kladko4Andrii A. Korchovyi5V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of UkraineAbstract Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − x Cd x Te cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.http://link.springer.com/article/10.1186/s11671-017-2093-xHgCdTeIR and sub-THz detectorIon implantation
spellingShingle Aleksey B. Smirnov
Rada K. Savkina
Ruslana S. Udovytska
Oleksandr I. Gudymenko
Vasyl P. Kladko
Andrii A. Korchovyi
Ion Beam Nanostructuring of HgCdTe Ternary Compound
Nanoscale Research Letters
HgCdTe
IR and sub-THz detector
Ion implantation
title Ion Beam Nanostructuring of HgCdTe Ternary Compound
title_full Ion Beam Nanostructuring of HgCdTe Ternary Compound
title_fullStr Ion Beam Nanostructuring of HgCdTe Ternary Compound
title_full_unstemmed Ion Beam Nanostructuring of HgCdTe Ternary Compound
title_short Ion Beam Nanostructuring of HgCdTe Ternary Compound
title_sort ion beam nanostructuring of hgcdte ternary compound
topic HgCdTe
IR and sub-THz detector
Ion implantation
url http://link.springer.com/article/10.1186/s11671-017-2093-x
work_keys_str_mv AT alekseybsmirnov ionbeamnanostructuringofhgcdteternarycompound
AT radaksavkina ionbeamnanostructuringofhgcdteternarycompound
AT ruslanasudovytska ionbeamnanostructuringofhgcdteternarycompound
AT oleksandrigudymenko ionbeamnanostructuringofhgcdteternarycompound
AT vasylpkladko ionbeamnanostructuringofhgcdteternarycompound
AT andriiakorchovyi ionbeamnanostructuringofhgcdteternarycompound