Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride
Tin (IV) oxide is a highly promising electron transport layer (ETL) for lead halide perovskite solar cells due to its high conductivity, transparency, wide band gap, and the possibility of low-temperature processing. Nonetheless, charge carrier recombination processes at the SnO2/perovskite interfac...
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Frontiers Media S.A.
2023-03-01
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| Series: | Frontiers in Materials |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2023.1118641/full |
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| author | Jiajiu Ye Jiajiu Ye Yuze Li Asma Aicha Medjahed Stéphanie Pouget Dmitry Aldakov Yueli Liu Peter Reiss |
| author_facet | Jiajiu Ye Jiajiu Ye Yuze Li Asma Aicha Medjahed Stéphanie Pouget Dmitry Aldakov Yueli Liu Peter Reiss |
| author_sort | Jiajiu Ye |
| collection | DOAJ |
| description | Tin (IV) oxide is a highly promising electron transport layer (ETL) for lead halide perovskite solar cells due to its high conductivity, transparency, wide band gap, and the possibility of low-temperature processing. Nonetheless, charge carrier recombination processes at the SnO2/perovskite interface diminish the device performance. Here, we demonstrate that SnO2 doping with guanidine hydrochloride (G-SnO2) leads to efficient surface passivation and a larger band offset between the ETL and the perovskite layer, resulting in reduced voltage losses and faster electron transfer. Moreover, G-SnO2 facilitates the growth of highly crystalline perovskite layers. Consequently, a power conversion efficiency of up to 23.48% and a high open-circuit voltage of 1.18 V are obtained in solar cells incorporating the G-SnO2 ETL. These devices also exhibited negligible hysteresis and maintained more than 96% of their initial power conversion efficiency after 1,250 h exposure to the air without encapsulation. |
| first_indexed | 2024-04-10T06:18:41Z |
| format | Article |
| id | doaj.art-9a6ce45bbedc4efca793371286e61637 |
| institution | Directory Open Access Journal |
| issn | 2296-8016 |
| language | English |
| last_indexed | 2024-04-10T06:18:41Z |
| publishDate | 2023-03-01 |
| publisher | Frontiers Media S.A. |
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| series | Frontiers in Materials |
| spelling | doaj.art-9a6ce45bbedc4efca793371286e616372023-03-02T05:15:28ZengFrontiers Media S.A.Frontiers in Materials2296-80162023-03-011010.3389/fmats.2023.11186411118641Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chlorideJiajiu Ye0Jiajiu Ye1Yuze Li2Asma Aicha Medjahed3Stéphanie Pouget4Dmitry Aldakov5Yueli Liu6Peter Reiss7CEA, CNRS, INP, IRIG/SyMMES, University Grenoble-Alpes, Grenoble, FranceHefei Institute of Physical Science, CAS, Hefei, ChinaCEA, CNRS, INP, IRIG/SyMMES, University Grenoble-Alpes, Grenoble, FranceCEA, CNRS, INP, IRIG/SyMMES, University Grenoble-Alpes, Grenoble, FranceCEA, IRIG/MEM, SGX, University Grenoble-Alpes, Grenoble, FranceCEA, CNRS, INP, IRIG/SyMMES, University Grenoble-Alpes, Grenoble, FranceState Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, ChinaCEA, CNRS, INP, IRIG/SyMMES, University Grenoble-Alpes, Grenoble, FranceTin (IV) oxide is a highly promising electron transport layer (ETL) for lead halide perovskite solar cells due to its high conductivity, transparency, wide band gap, and the possibility of low-temperature processing. Nonetheless, charge carrier recombination processes at the SnO2/perovskite interface diminish the device performance. Here, we demonstrate that SnO2 doping with guanidine hydrochloride (G-SnO2) leads to efficient surface passivation and a larger band offset between the ETL and the perovskite layer, resulting in reduced voltage losses and faster electron transfer. Moreover, G-SnO2 facilitates the growth of highly crystalline perovskite layers. Consequently, a power conversion efficiency of up to 23.48% and a high open-circuit voltage of 1.18 V are obtained in solar cells incorporating the G-SnO2 ETL. These devices also exhibited negligible hysteresis and maintained more than 96% of their initial power conversion efficiency after 1,250 h exposure to the air without encapsulation.https://www.frontiersin.org/articles/10.3389/fmats.2023.1118641/fullperovskite solar cellselectron transport layerSnO2guanidinium chloridegrain size |
| spellingShingle | Jiajiu Ye Jiajiu Ye Yuze Li Asma Aicha Medjahed Stéphanie Pouget Dmitry Aldakov Yueli Liu Peter Reiss Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride Frontiers in Materials perovskite solar cells electron transport layer SnO2 guanidinium chloride grain size |
| title | Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride |
| title_full | Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride |
| title_fullStr | Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride |
| title_full_unstemmed | Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride |
| title_short | Enhanced performance of planar perovskite solar cells by doping the SnO2 electron transport layer with guanidinium chloride |
| title_sort | enhanced performance of planar perovskite solar cells by doping the sno2 electron transport layer with guanidinium chloride |
| topic | perovskite solar cells electron transport layer SnO2 guanidinium chloride grain size |
| url | https://www.frontiersin.org/articles/10.3389/fmats.2023.1118641/full |
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