Review of Nanosheet Transistors Technology
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics o...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Tikrit University
2021-05-01
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| Series: | Tikrit Journal of Engineering Sciences |
| Subjects: | |
| Online Access: | https://tj-es.com/ojs/index.php/tjes/article/view/176 |
| _version_ | 1797692139616862208 |
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| author | Firas N. A. Hassan Agha Yasir H. Naif Mohammed N. Shakib |
| author_facet | Firas N. A. Hassan Agha Yasir H. Naif Mohammed N. Shakib |
| author_sort | Firas N. A. Hassan Agha |
| collection | DOAJ |
| description | Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nano-dimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).
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| first_indexed | 2024-03-12T02:23:16Z |
| format | Article |
| id | doaj.art-9a76d50231be49bd83fa0b5686d3b1cd |
| institution | Directory Open Access Journal |
| issn | 1813-162X 2312-7589 |
| language | English |
| last_indexed | 2024-03-12T02:23:16Z |
| publishDate | 2021-05-01 |
| publisher | Tikrit University |
| record_format | Article |
| series | Tikrit Journal of Engineering Sciences |
| spelling | doaj.art-9a76d50231be49bd83fa0b5686d3b1cd2023-09-06T02:22:05ZengTikrit UniversityTikrit Journal of Engineering Sciences1813-162X2312-75892021-05-01281Review of Nanosheet Transistors TechnologyFiras N. A. Hassan Agha0Yasir H. Naif1Mohammed N. Shakib2Electrical Department,/ Engineering College, Mosul University , Mosul, IraqDepartment of Computer Engineering, Faculty of Engineering, Tishk , International University, Erbil,IraqFaculty of Electrical and Electronics , Engineering Technology, University, Malaysia Pahang ,Pekan, MalaysiaNano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nano-dimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL). https://tj-es.com/ojs/index.php/tjes/article/view/176FinFETNanowireGAASub-threshold swingDownscaling |
| spellingShingle | Firas N. A. Hassan Agha Yasir H. Naif Mohammed N. Shakib Review of Nanosheet Transistors Technology Tikrit Journal of Engineering Sciences FinFET Nanowire GAA Sub-threshold swing Downscaling |
| title | Review of Nanosheet Transistors Technology |
| title_full | Review of Nanosheet Transistors Technology |
| title_fullStr | Review of Nanosheet Transistors Technology |
| title_full_unstemmed | Review of Nanosheet Transistors Technology |
| title_short | Review of Nanosheet Transistors Technology |
| title_sort | review of nanosheet transistors technology |
| topic | FinFET Nanowire GAA Sub-threshold swing Downscaling |
| url | https://tj-es.com/ojs/index.php/tjes/article/view/176 |
| work_keys_str_mv | AT firasnahassanagha reviewofnanosheettransistorstechnology AT yasirhnaif reviewofnanosheettransistorstechnology AT mohammednshakib reviewofnanosheettransistorstechnology |