| Summary: | This research work uses sp<sup>3</sup>d<sup>5</sup>s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La<sub>2</sub>O<sub>3</sub>) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n<sup>+</sup> donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length L<sub>SD</sub> = 35 nm, with La<sub>2</sub>O<sub>3</sub> as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (I<sub>ON</sub>/I<sub>OFF</sub> ratio) of 1.06 × 10<sup>9</sup>, and a low leakage current, or OFF current (I<sub>OFF</sub>), of 3.84 × 10<sup>−14</sup> A. The measured values of the mid-channel conduction band energy (E<sub>c</sub>) and charge carrier density (ρ) at V<sub>G</sub> = V<sub>D</sub> = 0.5 V are −0.309 eV and 6.24 × 10<sup>23</sup> C/cm<sup>3</sup>, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.
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