Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications
This research work uses sp<sup>3</sup>d<sup>5</sup>s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which ar...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/6/959 |
| _version_ | 1797609792422805504 |
|---|---|
| author | Pattunnarajam Paramasivam Naveenbalaji Gowthaman Viranjay M. Srivastava |
| author_facet | Pattunnarajam Paramasivam Naveenbalaji Gowthaman Viranjay M. Srivastava |
| author_sort | Pattunnarajam Paramasivam |
| collection | DOAJ |
| description | This research work uses sp<sup>3</sup>d<sup>5</sup>s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La<sub>2</sub>O<sub>3</sub>) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n<sup>+</sup> donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length L<sub>SD</sub> = 35 nm, with La<sub>2</sub>O<sub>3</sub> as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (I<sub>ON</sub>/I<sub>OFF</sub> ratio) of 1.06 × 10<sup>9</sup>, and a low leakage current, or OFF current (I<sub>OFF</sub>), of 3.84 × 10<sup>−14</sup> A. The measured values of the mid-channel conduction band energy (E<sub>c</sub>) and charge carrier density (ρ) at V<sub>G</sub> = V<sub>D</sub> = 0.5 V are −0.309 eV and 6.24 × 10<sup>23</sup> C/cm<sup>3</sup>, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed. |
| first_indexed | 2024-03-11T06:06:20Z |
| format | Article |
| id | doaj.art-9aa52555c15f49fc863345985f86ab75 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T06:06:20Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-9aa52555c15f49fc863345985f86ab752023-11-17T12:59:32ZengMDPI AGNanomaterials2079-49912023-03-0113695910.3390/nano13060959Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid ApplicationsPattunnarajam Paramasivam0Naveenbalaji Gowthaman1Viranjay M. Srivastava2Electronics and Communication Engineering, Prince Shri Venkateshwara Padmavathy Engineering College, Chennai 600127, IndiaDepartment of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban 4041, South AfricaDepartment of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban 4041, South AfricaThis research work uses sp<sup>3</sup>d<sup>5</sup>s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La<sub>2</sub>O<sub>3</sub>) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n<sup>+</sup> donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length L<sub>SD</sub> = 35 nm, with La<sub>2</sub>O<sub>3</sub> as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (I<sub>ON</sub>/I<sub>OFF</sub> ratio) of 1.06 × 10<sup>9</sup>, and a low leakage current, or OFF current (I<sub>OFF</sub>), of 3.84 × 10<sup>−14</sup> A. The measured values of the mid-channel conduction band energy (E<sub>c</sub>) and charge carrier density (ρ) at V<sub>G</sub> = V<sub>D</sub> = 0.5 V are −0.309 eV and 6.24 × 10<sup>23</sup> C/cm<sup>3</sup>, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.https://www.mdpi.com/2079-4991/13/6/959nanowiretight binding modelsNEGFGAAhydrostatic strainmicroelectronics |
| spellingShingle | Pattunnarajam Paramasivam Naveenbalaji Gowthaman Viranjay M. Srivastava Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications Nanomaterials nanowire tight binding models NEGF GAA hydrostatic strain microelectronics |
| title | Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications |
| title_full | Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications |
| title_fullStr | Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications |
| title_full_unstemmed | Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications |
| title_short | Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications |
| title_sort | design and analysis of gallium arsenide based nanowire using coupled non equilibrium green function for rf hybrid applications |
| topic | nanowire tight binding models NEGF GAA hydrostatic strain microelectronics |
| url | https://www.mdpi.com/2079-4991/13/6/959 |
| work_keys_str_mv | AT pattunnarajamparamasivam designandanalysisofgalliumarsenidebasednanowireusingcouplednonequilibriumgreenfunctionforrfhybridapplications AT naveenbalajigowthaman designandanalysisofgalliumarsenidebasednanowireusingcouplednonequilibriumgreenfunctionforrfhybridapplications AT viranjaymsrivastava designandanalysisofgalliumarsenidebasednanowireusingcouplednonequilibriumgreenfunctionforrfhybridapplications |