Van der Waals engineering of ferroelectric heterostructures for long-retention memory
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single cr...
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Bibliographic Details
| Main Authors: |
Xiaowei Wang,
Chao Zhu,
Ya Deng,
Ruihuan Duan,
Jieqiong Chen,
Qingsheng Zeng,
Jiadong Zhou,
Qundong Fu,
Lu You,
Song Liu,
James H. Edgar,
Peng Yu,
Zheng Liu |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Portfolio
2021-02-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/s41467-021-21320-2
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