Ultra-fast switching memristors based on two-dimensional materials
Abstract The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiti...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-46372-y |
| _version_ | 1797259231052693504 |
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| author | S. S. Teja Nibhanupudi Anupam Roy Dmitry Veksler Matthew Coupin Kevin C. Matthews Matthew Disiena Ansh Jatin V. Singh Ioana R. Gearba-Dolocan Jamie Warner Jaydeep P. Kulkarni Gennadi Bersuker Sanjay K. Banerjee |
| author_facet | S. S. Teja Nibhanupudi Anupam Roy Dmitry Veksler Matthew Coupin Kevin C. Matthews Matthew Disiena Ansh Jatin V. Singh Ioana R. Gearba-Dolocan Jamie Warner Jaydeep P. Kulkarni Gennadi Bersuker Sanjay K. Banerjee |
| author_sort | S. S. Teja Nibhanupudi |
| collection | DOAJ |
| description | Abstract The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the memristor switching mechanism. Cycling endurance data confirms the ultra-fast switching capability of these memristors, making them attractive for next generation computing, storage, and Radio-Frequency (RF) circuit applications. |
| first_indexed | 2024-04-24T23:06:08Z |
| format | Article |
| id | doaj.art-9ad9a4c0751548538ffa1a548b7a4e54 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-24T23:06:08Z |
| publishDate | 2024-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-9ad9a4c0751548538ffa1a548b7a4e542024-03-17T12:30:13ZengNature PortfolioNature Communications2041-17232024-03-0115111010.1038/s41467-024-46372-yUltra-fast switching memristors based on two-dimensional materialsS. S. Teja Nibhanupudi0Anupam Roy1Dmitry Veksler2Matthew Coupin3Kevin C. Matthews4Matthew Disiena5Ansh6Jatin V. Singh7Ioana R. Gearba-Dolocan8Jamie Warner9Jaydeep P. Kulkarni10Gennadi Bersuker11Sanjay K. Banerjee12Microelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinHRL LaboratoriesTexas Materials Institute, The University of Texas at AustinTexas Materials Institute, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinTexas Materials Institute, The University of Texas at AustinTexas Materials Institute, The University of Texas at AustinMicroelectronics Research Center, The University of Texas at AustinM2D solutionsMicroelectronics Research Center, The University of Texas at AustinAbstract The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the memristor switching mechanism. Cycling endurance data confirms the ultra-fast switching capability of these memristors, making them attractive for next generation computing, storage, and Radio-Frequency (RF) circuit applications.https://doi.org/10.1038/s41467-024-46372-y |
| spellingShingle | S. S. Teja Nibhanupudi Anupam Roy Dmitry Veksler Matthew Coupin Kevin C. Matthews Matthew Disiena Ansh Jatin V. Singh Ioana R. Gearba-Dolocan Jamie Warner Jaydeep P. Kulkarni Gennadi Bersuker Sanjay K. Banerjee Ultra-fast switching memristors based on two-dimensional materials Nature Communications |
| title | Ultra-fast switching memristors based on two-dimensional materials |
| title_full | Ultra-fast switching memristors based on two-dimensional materials |
| title_fullStr | Ultra-fast switching memristors based on two-dimensional materials |
| title_full_unstemmed | Ultra-fast switching memristors based on two-dimensional materials |
| title_short | Ultra-fast switching memristors based on two-dimensional materials |
| title_sort | ultra fast switching memristors based on two dimensional materials |
| url | https://doi.org/10.1038/s41467-024-46372-y |
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