High-Speed Q-Modulation of Injection-Locked Semiconductor Lasers

We propose a novel approach for high-speed direct modulation of optically injection-locked semiconductor lasers by modulating the photon lifetime (or the Q-factor). Based on the injection locking rate equations, the frequency response is analytically derived and numerically simulated. Compared with...

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Bibliographic Details
Main Authors: X. Wang, L. Chrostowski
Format: Article
Language:English
Published: IEEE 2011-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/6032042/
Description
Summary:We propose a novel approach for high-speed direct modulation of optically injection-locked semiconductor lasers by modulating the photon lifetime (or the Q-factor). Based on the injection locking rate equations, the frequency response is analytically derived and numerically simulated. Compared with conventional current modulation for injection-locked lasers, Q-modulation has the same resonance frequency, but the dc-to-resonance roll-off caused by the real-pole frequency is largely eliminated, and the response beyond the resonance frequency decays much slower; therefore, a significant enhancement in the modulation bandwidth can be achieved. We also show that the two modulation methods have similar chirp characteristics.
ISSN:1943-0655