Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study
Exciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled excit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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De Gruyter
2020-02-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2019-0363 |
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| author | Ramazani Ali Shayeganfar Farzaneh Jalilian Jaafar Fang Nicholas X. |
| author_facet | Ramazani Ali Shayeganfar Farzaneh Jalilian Jaafar Fang Nicholas X. |
| author_sort | Ramazani Ali |
| collection | DOAJ |
| description | Exciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information. |
| first_indexed | 2024-12-21T05:30:52Z |
| format | Article |
| id | doaj.art-9b3179016d134bb9932bed4fb737a04b |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2024-12-21T05:30:52Z |
| publishDate | 2020-02-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-9b3179016d134bb9932bed4fb737a04b2022-12-21T19:14:32ZengDe GruyterNanophotonics2192-86142020-02-019233734910.1515/nanoph-2019-0363nanoph-2019-0363Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles studyRamazani Ali0Shayeganfar Farzaneh1Jalilian Jaafar2Fang Nicholas X.3Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USADepartment of Civil and Environmental Engineering, Rice University, Houston, TX, USADepartment of Physics, College of Sciences, Yasouj University, Yasouj, IranDepartment of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USAExciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information.https://doi.org/10.1515/nanoph-2019-0363surface plasmonhot carriervalley polaritonsluminescencestrain engineering |
| spellingShingle | Ramazani Ali Shayeganfar Farzaneh Jalilian Jaafar Fang Nicholas X. Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study Nanophotonics surface plasmon hot carrier valley polaritons luminescence strain engineering |
| title | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_full | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_fullStr | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_full_unstemmed | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_short | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_sort | exciton plasmon polariton coupling and hot carrier generation in two dimensional sib semiconductors a first principles study |
| topic | surface plasmon hot carrier valley polaritons luminescence strain engineering |
| url | https://doi.org/10.1515/nanoph-2019-0363 |
| work_keys_str_mv | AT ramazaniali excitonplasmonpolaritoncouplingandhotcarriergenerationintwodimensionalsibsemiconductorsafirstprinciplesstudy AT shayeganfarfarzaneh excitonplasmonpolaritoncouplingandhotcarriergenerationintwodimensionalsibsemiconductorsafirstprinciplesstudy AT jalilianjaafar excitonplasmonpolaritoncouplingandhotcarriergenerationintwodimensionalsibsemiconductorsafirstprinciplesstudy AT fangnicholasx excitonplasmonpolaritoncouplingandhotcarriergenerationintwodimensionalsibsemiconductorsafirstprinciplesstudy |