Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors
Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium...
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2020-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/13/21/4956 |
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| author | Yu-Li Hsieh Liann-Be Chang Ming-Jer Jeng Chung-Yi Li Chien-Fu Shih Hung-Tsung Wang Zi-Xin Ding Chia-Ning Chang Hao-Zong Lo Yuan-Po Chiang |
| author_facet | Yu-Li Hsieh Liann-Be Chang Ming-Jer Jeng Chung-Yi Li Chien-Fu Shih Hung-Tsung Wang Zi-Xin Ding Chia-Ning Chang Hao-Zong Lo Yuan-Po Chiang |
| author_sort | Yu-Li Hsieh |
| collection | DOAJ |
| description | Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized. |
| first_indexed | 2024-03-10T15:06:19Z |
| format | Article |
| id | doaj.art-9b4fb213016c4349bee64ab31ec2144d |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T15:06:19Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-9b4fb213016c4349bee64ab31ec2144d2023-11-20T19:45:40ZengMDPI AGMaterials1996-19442020-11-011321495610.3390/ma13214956Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM VaractorsYu-Li Hsieh0Liann-Be Chang1Ming-Jer Jeng2Chung-Yi Li3Chien-Fu Shih4Hung-Tsung Wang5Zi-Xin Ding6Chia-Ning Chang7Hao-Zong Lo8Yuan-Po Chiang9Department of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanGreen Technology Research Center, Chang Gung University, Guishan, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanTechnical Service Center, Industrial Technology Research Institute, Chutung, Hsinchu 310, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanGraduate Institute of Electro-Optical Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanDepartment of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanGraduate Institute of Electro-Optical Engineering, Chang Gung University, Guishan, Taoyuan 333, TaiwanOur laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin film in between the Schottky contact electrode to manufacture a metal-oxide-semiconductor-oxide-metal (MOSOM) varactor. However, the thin-film quality and heterojunction interfaces will affect these fabricated varactors in various ways, such as the asymmetry threshold voltage to the variable capacitance characteristics. This study aims to address the issues associated with the inserted oxide thin film, as well as to determine how improvements could be obtained by using an oxygen furnace annealing process. As a result, the breakdown voltage of the MOSOM varactor was further promoted and a more robust anti-surge module was thus realized.https://www.mdpi.com/1996-1944/13/21/4956MSMvaractorGa<sub>2</sub>O<sub>3</sub>MOSOMheterojunctionfurnace annealing |
| spellingShingle | Yu-Li Hsieh Liann-Be Chang Ming-Jer Jeng Chung-Yi Li Chien-Fu Shih Hung-Tsung Wang Zi-Xin Ding Chia-Ning Chang Hao-Zong Lo Yuan-Po Chiang Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors Materials MSM varactor Ga<sub>2</sub>O<sub>3</sub> MOSOM heterojunction furnace annealing |
| title | Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors |
| title_full | Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors |
| title_fullStr | Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors |
| title_full_unstemmed | Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors |
| title_short | Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors |
| title_sort | annealing dependent breakdown voltage and capacitance of gallium oxide based gallium nitride mosom varactors |
| topic | MSM varactor Ga<sub>2</sub>O<sub>3</sub> MOSOM heterojunction furnace annealing |
| url | https://www.mdpi.com/1996-1944/13/21/4956 |
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