Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium...

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Bibliographic Details
Main Authors:	Yu-Li Hsieh, Liann-Be Chang, Ming-Jer Jeng, Chung-Yi Li, Chien-Fu Shih, Hung-Tsung Wang, Zi-Xin Ding, Chia-Ning Chang, Hao-Zong Lo, Yuan-Po Chiang
Format:	Article
Language:	English
Published:	MDPI AG 2020-11-01
Series:	Materials
Subjects:	MSM varactor Ga<sub>2</sub>O<sub>3</sub> MOSOM heterojunction furnace annealing
Online Access:	https://www.mdpi.com/1996-1944/13/21/4956

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