Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets
The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation....
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0168468 |
| _version_ | 1797663147424743424 |
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| author | Yanan Yuan Daxiang Liu Jingjing Yu Guanhua Zhang Xiang Chen Ruiqi Liu Siyu Wang Fangfang Pei Long Wei Zhi Li Junming Guo Shouguo Wang Zhaoliang Liao Wensheng Yan Ziqiang Qiu Mengmeng Yang Qian Li |
| author_facet | Yanan Yuan Daxiang Liu Jingjing Yu Guanhua Zhang Xiang Chen Ruiqi Liu Siyu Wang Fangfang Pei Long Wei Zhi Li Junming Guo Shouguo Wang Zhaoliang Liao Wensheng Yan Ziqiang Qiu Mengmeng Yang Qian Li |
| author_sort | Yanan Yuan |
| collection | DOAJ |
| description | The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature. |
| first_indexed | 2024-03-11T19:10:25Z |
| format | Article |
| id | doaj.art-9b5a763ce025426e988e4b62b3e44d33 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-11T19:10:25Z |
| publishDate | 2023-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-9b5a763ce025426e988e4b62b3e44d332023-10-09T20:09:10ZengAIP Publishing LLCAPL Materials2166-532X2023-09-01119091101091101-810.1063/5.0168468Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnetsYanan Yuan0Daxiang Liu1Jingjing Yu2Guanhua Zhang3Xiang Chen4Ruiqi Liu5Siyu Wang6Fangfang Pei7Long Wei8Zhi Li9Junming Guo10Shouguo Wang11Zhaoliang Liao12Wensheng Yan13Ziqiang Qiu14Mengmeng Yang15Qian Li16National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaInstitute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, ChinaState Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, ChinaDepartment of Physics, University of California, Berkeley, California 94720, USANational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaInstitute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, ChinaSchool of Materials Science and Engineering Department, Anhui University, Hefei 230601, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaDepartment of Physics, University of California, Berkeley, California 94720, USAInstitute of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, ChinaNational Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, ChinaThe creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature.http://dx.doi.org/10.1063/5.0168468 |
| spellingShingle | Yanan Yuan Daxiang Liu Jingjing Yu Guanhua Zhang Xiang Chen Ruiqi Liu Siyu Wang Fangfang Pei Long Wei Zhi Li Junming Guo Shouguo Wang Zhaoliang Liao Wensheng Yan Ziqiang Qiu Mengmeng Yang Qian Li Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets APL Materials |
| title | Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets |
| title_full | Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets |
| title_fullStr | Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets |
| title_full_unstemmed | Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets |
| title_short | Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets |
| title_sort | modulating above room temperature magnetism in ga implanted fe5gete2 van der waals magnets |
| url | http://dx.doi.org/10.1063/5.0168468 |
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