Dielectric engineered graphene transistors for high-performance near-infrared photodetection
Summary: Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we rep...
Main Authors: | Weijian Zhou, Tieying Ma, Ye Tian, Yixin Jiang, Xuechao Yu |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2024-03-01
|
Series: | iScience |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004224005352 |
Similar Items
-
Recent progress in short- to long-wave infrared photodetection using 2D materials and heterostructures
by: Guan, Xinwei, et al.
Published: (2021) -
Discussion of the Epsilon-Near-Zero Effect of Graphene in a Horizontal Slot Waveguide
by: Min-Suk Kwon
Published: (2014-01-01) -
Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS2 heterostructure for sensitive photodetection
by: Fang Li, et al.
Published: (2021-09-01) -
Versatile aza-BODIPY-based low-bandgap conjugated small molecule for light harvesting and near-infrared photodetection
by: Bhat, Gurudutt, et al.
Published: (2023) -
Fabrication of two-dimensional graphene-based heterostructures for photodetection applications
by: Chen, T
Published: (2019)