Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance

This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model considering segmentation of MOSFETs with waffle ga...

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Main Authors: P. Vacula, V. Kote, D. Barri, M. Vacula, M. Husak, J. Jakovenko, S. Privitera
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2019-09-01
Series:Radioengineering
Subjects:
Online Access:https://www.radioeng.cz/fulltexts/2019/19_03_0598_0609.pdf
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author P. Vacula
V. Kote
D. Barri
M. Vacula
M. Husak
J. Jakovenko
S. Privitera
author_facet P. Vacula
V. Kote
D. Barri
M. Vacula
M. Husak
J. Jakovenko
S. Privitera
author_sort P. Vacula
collection DOAJ
description This article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model considering segmentation of MOSFETs with waffle gate patterns, due to bulk connections, has been there proposed. Two different MOSFET topologies with gate waffle patterns have been investigated and compared with the same on-resistance of a standard MOSFET with finger gate pattern. The first one with diagonal metal interconnections allows reaching more than 40 % area reduction. The second MOSFET with the more simple orthogonal metal interconnections allows saving more than 20 % area. Moreover, new models defining conditions where segmented power MOSFETs with waffle gate patterns occupy less area than the standard MOSFET with finger gate pattern, have been introduced.
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spelling doaj.art-9bbc32a7da06432f8c5d655c4ce6a8482022-12-22T02:08:16ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122019-09-01283598609Comparison of MOSFET Gate Waffle Patterns Based on Specific On-ResistanceP. VaculaV. KoteD. BarriM. VaculaM. HusakJ. JakovenkoS. PriviteraThis article describes waffle power MOSFET segmentation and defines its analytic models. Although waffle gate pattern is well-known architecture for effective channel scaling without requirements on process modification, no until today precise model considering segmentation of MOSFETs with waffle gate patterns, due to bulk connections, has been there proposed. Two different MOSFET topologies with gate waffle patterns have been investigated and compared with the same on-resistance of a standard MOSFET with finger gate pattern. The first one with diagonal metal interconnections allows reaching more than 40 % area reduction. The second MOSFET with the more simple orthogonal metal interconnections allows saving more than 20 % area. Moreover, new models defining conditions where segmented power MOSFETs with waffle gate patterns occupy less area than the standard MOSFET with finger gate pattern, have been introduced.https://www.radioeng.cz/fulltexts/2019/19_03_0598_0609.pdfPower MOSFETwaffle MOSFETspecific on-resistanceintegrated circuits
spellingShingle P. Vacula
V. Kote
D. Barri
M. Vacula
M. Husak
J. Jakovenko
S. Privitera
Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
Radioengineering
Power MOSFET
waffle MOSFET
specific on-resistance
integrated circuits
title Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
title_full Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
title_fullStr Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
title_full_unstemmed Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
title_short Comparison of MOSFET Gate Waffle Patterns Based on Specific On-Resistance
title_sort comparison of mosfet gate waffle patterns based on specific on resistance
topic Power MOSFET
waffle MOSFET
specific on-resistance
integrated circuits
url https://www.radioeng.cz/fulltexts/2019/19_03_0598_0609.pdf
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